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Anti-reflective image sensor

An image sensor, anti-reflection technology, applied in the field of image sensors, which can solve the problems of incident light loss, surface area reduction, photodiode responsivity and quantum efficiency reduction, etc.

Inactive Publication Date: 2011-04-20
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, as the pixel becomes smaller, the surface area capable of receiving incident light decreases, and reflection at the photodiode becomes one of the main causes of incident light loss, which leads to a decrease in photodiode responsivity and quantum efficiency

Method used

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Examples

Experimental program
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Embodiment Construction

[0040] Preferred embodiment image sensors and their associated methods of fabrication provide extraordinary light sensitivity using anti-reflection layer structures.

[0041] Such as figure 1 As shown, a complementary metal oxide semiconductor (CMOS) image sensor according to the present disclosure includes: a sensor array 10; a timing generator (timing generator) 20; a row decoder 30 in signal communication with the timing generator; a row driver 40 in the row Signal communication between decoder and sensor array; correlated double sampler CDS 50, signal communication with sensor array (ISC); analog-to-digital converter ADC60, signal communication with correlated double sampler; latch 70, with analog-to-digital converter signal communication; and column decoder 80, signal communication between the timing generator and the latch.

[0042] go to figure 2 , figure 1 The equivalent circuit of the sensor array of is generally indicated by reference numeral 10 . Here, each pix...

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PUM

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Abstract

An anti-reflective image sensor and method of fabrication are provided, the sensor including a substrate; first color sensing pixels disposed in the substrate; second color sensing pixels disposed in the substrate; third color sensing pixels disposed in the substrate; a first layer disposed directly on the first, second and third color sensing pixels; a second layer disposed directly on the first layer overlying the first, second and third color sensing pixels; and a third layer disposed directly on portions of the second layer overlying at least one of the first or second color sensing pixels, wherein the first layer has a first refractive index, the second layer has a second refractive index greater than the first refractive index, and the third layer has a third refractive index greater than the second refractive index.

Description

technical field [0001] The present disclosure relates generally to image sensors, and more particularly to image sensors having anti-reflective layers. Background technique [0002] Image sensors are already ubiquitous. They are widely used in digital cameras, cellular phones, security cameras, medical, automotive, and other applications. [0003] However, as the pixel becomes smaller, the surface area capable of receiving incident light decreases, and reflection at the photodiode becomes one of the main causes of incident light loss, which leads to a decrease in photodiode responsivity and quantum efficiency. Contents of the invention [0004] The present disclosure teaches an image sensor with an anti-reflection layer and a method of manufacturing the same. Exemplary embodiments are provided. [0005] An anti-reflection image sensor of an exemplary embodiment is provided, and the anti-reflection image sensor includes: a substrate; a plurality of first color sensing pi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N25/00
CPCH01L27/14625H01L27/14609H01L27/1462H01L27/14645H01L31/0232H01L27/14629H01L27/14685H01L27/146
Inventor 李廷好郑相日
Owner SAMSUNG ELECTRONICS CO LTD