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Method for washing light mask

A mask and area technology, applied in cleaning methods and appliances, chemical instruments and methods, optics, etc., can solve problems such as non-solution methods, weak oxidation of ozone water, and poor removal effect

Inactive Publication Date: 2012-05-30
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the oxidation of ozone water is not strong, the removal effect is not good
[0031] It can be seen that although the existing two methods can remove the residual glue on the mask to a certain extent, they are not ideal solutions due to certain defects.

Method used

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  • Method for washing light mask
  • Method for washing light mask
  • Method for washing light mask

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Aiming at the problems existing in the prior art, the present invention proposes an improved photomask cleaning method, which can effectively remove the residual glue on the photomask, and will not affect the subsequent process because sulfuric acid solution is not needed.

[0052] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0053] image 3 It is a flow chart of an embodiment of the mask cleaning method of the present invention. Such as image 3 As shown, it mainly includes the following steps:

[0054] Step 301: Evenly spray a designated solution on the photomask protective film bonding area on the photomask, and wipe the area sprayed with the designated solution in one direction, and stop wiping when there is no residual glue on the photomask.

[0055] Same as in the prior art, if the photom...

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Abstract

The invention discloses a method for washing a light mask. The method comprises the following steps of: uniformly spraying a designated solution on the paste area of a light mask pellicle on the light mask after the light mask pellicle on the light mask is taken down, wiping the area sprayed by the designated solution in a single direction, stopping wiping when residual glue does not exist on the light mask by visual; washing the light mask by sequentially utilizing ozone water, deionized water, an SC (Standard Clean)-1 solution and the deionized water; and drying the washed light mask. With the scheme of the invention, the residual glue on the light mask can be effectively removed.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a method for cleaning a photomask. Background technique [0002] In the prior art, the photolithography process is used in many cases. For example, before the ion implantation, the photolithography process is used to define the area where the ion implantation needs to be performed. Trench isolation etc. [0003] figure 1 It is a flow chart of the implementation of the existing photolithography process. Such as figure 1 As shown, it mainly includes: [0004] Step 101: Perform cleaning, dehydration and film-forming treatment on the surface of the silicon wafer. [0005] Cleaning includes wet cleaning and deionized water rinsing to remove pollutants on the surface of the silicon wafer, such as particles, organic matter, and process residues; dehydration and drying are completed in a closed chamber to remove most of the water vapor on the surface of the silicon wafer ; ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/82B08B7/04F26B5/08
Inventor 李德建
Owner SEMICON MFG INT (SHANGHAI) CORP