Method for epitaxial growth of molecular beam of low-density InAs quantum dots

A technology of molecular beam epitaxy and growth method, applied in the field of molecular beam epitaxy growth, can solve the problems of limited extraction efficiency, low growth, difficulty in density single-photon source long-wavelength quantum dots, etc., and achieve the effect of improving luminous efficiency and increasing collection efficiency.

Inactive Publication Date: 2011-04-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, this method requires high-precision lithography, and due to the diffraction at the metal hole, the extraction efficiency is limited when coupled with a single-mode fiber; and the external quantum efficiency is very low due to the lack of space constraints for the ca

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  • Method for epitaxial growth of molecular beam of low-density InAs quantum dots
  • Method for epitaxial growth of molecular beam of low-density InAs quantum dots
  • Method for epitaxial growth of molecular beam of low-density InAs quantum dots

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Embodiment

[0071] In this embodiment, Veeco GEN II molecular beam epitaxy equipment is used for growth.

[0072] The GaAs (100) substrate is placed on the sample holder, and introduced into the sample chamber for baking at a temperature of 180-250 degrees Celsius.

[0073] The baked substrate is introduced into the preparation chamber and degassed at 400-450 degrees Celsius, and the atmospheric pressure in the buffer chamber is reduced to 10 -8 When the Torr is below, the degassing is complete.

[0074] The degassed substrate is introduced into the growth chamber, and the temperature of the substrate heater is raised, and the sample is deoxidized under the protection of As. Deoxidation temperature range: 580 to 620 degrees Celsius, deoxidation time 5 minutes.

[0075] During the deoxidation process, the atomic reconstruction on the surface of the substrate was observed with the help of a reflection high-energy electron diffractometer (RHEED) to determine whether it was deoxidized.

[...

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Abstract

The invention discloses a method for epitaxial growth of a molecular beam of low-density InAs quantum dots, which comprises the following steps of: putting a GaAs substrate on a sample support, and introducing the GaAs substrate into a sample introduction room for baking; after baking, introducing the GaAs substrate into a preparation room, and degassing the GaAs substrate; introducing degassed GaAs substrate into a growth room, heating a heater of the GaAs substrate, and deoxidizing the GaAs substrate under the protection of As; cooling the heater of the GaAs substrate to the growth temperature, growing a GaAs buffer layer, and doping Si; growing a plurality of pairs of GaAs/AlGaAs distributed Bragg reflectors; reducing the growth temperature, and growing low-density quantum dots; growing an InGaAs(Sb) covering layer; growing coupled quantum dots to expand the wavelength; growing a doped GaAs layer; and manufacturing upper and lower electrodes. By using the method, the luminous efficiency of the quantum dots is effectively improved, the collection efficiency is improved, and the regulation and control of the wavelength are realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for growing low-density quantum dots, in particular to a molecular beam epitaxy (MBE) method for growing low-density InAs quantum dots on a GaAs substrate. Background technique [0002] In recent years, with the development of high-quality self-organized quantum dot technology, the research of semiconductor quantum dots in quantum optics and quantum communication has attracted more and more people's interest. These quantum dots not only finally realize the three-dimensional confinement of the carriers, resulting in the energy of the carriers being quantized in three dimensions and having discrete energy levels, showing the shell filling characteristics of some atoms, but also naturally In solid systems, photons with non-classical statistical distributions can be tuned. [0003] The anti-bunching effect of photo-induced or electro-induced photons has been...

Claims

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Application Information

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IPC IPC(8): H01L33/02H01L33/08H01L33/10
Inventor 牛智川倪海桥王海莉贺继方朱岩李密峰王鹏飞黄社松熊永华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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