Method for improving filling capacity of wafer channel

Abstract

The invention provides a method for improving the filling capacity of a wafer channel. A channel is formed on a wafer. The method comprises the following steps: step 100, depositing a first silicon oxide thin layer in the channel at a first rate of deposition based on a high aspect ratio processing technology of ozone-tetraethoxysilane chemical components; step 200, carrying out high-density plasma chemical vapor deposition by DC bias power of a first substrate so as to facilitate etching the first silicon oxide thin layer; and repeating step 100 and step 200 in sequence until the thickness of the first silicon oxide thin layer reaches 2000 angstrom after the etching is over, thus finishing the filling of the wafer channel. The method for improving the filling capacity of the wafer channel can be used to effectively meet the high aspect ratio processing requirements in the new process.

Description

technical field [0001] The invention relates to the manufacturing field of semiconductor devices, and in particular to a method for improving the filling capability of wafer trenches. Background technique [0002] In the field of semiconductor manufacturing, high density plasma chemical vapor deposition (High Density Plasma Chemical Vapor Deposition, HDP-CVD) with good filling ability, better film deposition characteristics and higher filling efficiency is usually used to deposit oxide in shallow trenches. Silicon thin film to form a shallow trench isolation structure (Shallow Trench Isolation, STI), a pre-metal dielectric layer (Pre-Metal Dielectric, PMD) or an inter-metal dielectric layer (Inter-Metal Dielectric, IMD) . However, with the continuous reduction of the minimum feature size of semiconductor devices, the size of STI is also reduced accordingly. When the minimum feature size of semiconductor devices is reduced to 65 nanometers and below, the HDP-CVD process has ...

AI Technical Summary

Problems solved by technology

[0004] However, for the high-density plasma chemical vapor deposition technology, only in the STI process with an aspect ratio of less than 6.0 or the PMD process with an aspect ratio of less than 2.7, there will be no hole defects when filling the trench; for As far as the high aspect ratio process technology is concerned, only in the STI process with an aspect ratio of less than 7.0 or the PMD process with an aspect ratio of less than 3.0 will there be no hole defects when filling the trench

Therefore, the trench filling technology in the prior art can only guarantee that there will be no hole defects when the aspect ratio is less than 7.0

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