Light-emitting diode chip and manufacturing method thereof and light-emitting diode with chip
A technology for light-emitting diodes and a manufacturing method, which is applied in the directions of semiconductor devices, electrical components, circuits, etc., can solve the problems of low light extraction efficiency of light-emitting diode chips and the like
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no. 2 example
[0032] In this embodiment, the preferred substrate is sapphire; the semiconductor material is gallium nitride; the first type semiconductor is N-type gallium nitride; the second type semiconductor is P-type gallium nitride; the third electrode metal layer and the fourth electrode metal layer The materials are consistent, all of which are titanium, aluminum, titanium, gold multilayer metal film layer structure, and the thickness of each metal film layer is 5nm, 200nm, 15nm, 100nm in turn.
[0033]In step S100, the front side of the sapphire substrate is processed to form a rough surface by using an existing mechanical grinding process. The arithmetic average deviation of the profile of the rough surface is 0.2-2um, which is more conducive to reducing the probability of total reflection of light in the LED chip. And it is preferable that the convex microstructure formed by grinding is a cone structure. According to the principle of light reflection and refraction, the cone struc...
no. 3 example
[0042] In this embodiment, on the basis of the second embodiment, the light emitting diode chips manufactured in the second embodiment are continued to be processed, and a method for manufacturing a light emitting diode flip chip is proposed. refer to figure 2 In addition to steps S100 to S500, the method for manufacturing a light emitting diode chip in this embodiment also includes steps S600, S700, and S800, specifically as follows:
[0043] Step S600: Thinning the back of the sapphire substrate, the thinning in this embodiment is achieved by mechanical grinding. The thinned thickness depends on the thickness of the sapphire substrate, which can be easily determined by those skilled in the art. The back side of the thinned sapphire substrate also forms a rough surface, which is conducive to increasing light output.
[0044] Step S700: providing a substrate, the substrate has a third electrode and a fourth electrode corresponding to the third electrode metal layer and the ...
no. 4 example
[0051] image 3 It is a schematic diagram of the substrate structure of the fourth embodiment of the present invention. Figure 4 It is a schematic structural diagram of a light emitting diode chip according to the fourth embodiment of the present invention.
[0052] refer to image 3 , Figure 4 , the fourth embodiment of the present invention is proposed. The light-emitting diode chip of this embodiment includes a substrate 1, a first type semiconductor layer 2 formed on the front surface of the substrate, and a third electrode bonding area is formed on the first type semiconductor layer 2, formed on the first type semiconductor layer 2. The light emitting layer 3 on the layer 2, the second electrical type semiconductor layer 4 formed on the light emitting layer 3, the fourth electrode metal layer 7 formed on the second type semiconductor layer 4 and the third electrode bonding wire area The third electrode metal layer 8 on the substrate, wherein the front surface of the...
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