Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing unary or binary patterning colloidal photonic crystal

A colloidal photonic crystal and patterning technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of complex preparation process, limited application range, high cost, etc., and achieve simple operation and broad application prospects , the effect of uniform thickness and orientation

Active Publication Date: 2012-12-05
INST OF CHEM CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation process of these patterned substrates is relatively complicated and the cost is relatively high, which limits its application range.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing unary or binary patterning colloidal photonic crystal
  • Method for preparing unary or binary patterning colloidal photonic crystal
  • Method for preparing unary or binary patterning colloidal photonic crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1) Spin-coat a layer of photoresist with a thickness of 2 microns on a clean and hydrophilic silicon substrate. After etching, obtain patterned substrate, on this patterned substrate, use vacuum evaporation method (vacuum degree is 10 -3 Pa) prepare one deck thickness to be the chromium layer of 2 nanometers, on the chromium layer, use vacuum evaporation method again (vacuum tightness is 10 -3 Pa) After preparing a layer of copper layer with a thickness of 20 nanometers, the substrate is inserted into an aqueous dispersion containing monodisperse 250nm polystyrene microspheres (the volume percentage of polystyrene microspheres is 0.1%, and the degree of dispersion is 3 %) at a constant temperature of 65°C to obtain a unitary patterned colloidal photonic crystal film with a thickness of 2 microns on the surface of the substrate;

[0030] 2) Soak the substrate obtained in step 1) in an ethanol solvent for 10 minutes, and then ultrasonicate for 2 seconds at an ultrasonic ...

Embodiment 2

[0033] 1) Spin-coat a layer of photoresist with a thickness of 2 microns on a clean and hydrophilic silicon substrate. After etching, obtain patterned substrate, on this patterned substrate, use vacuum evaporation method (vacuum degree is 10 -3 Pa) prepare one deck thickness to be the chromium layer of 2 nanometers, on the chromium layer, use vacuum evaporation method again (vacuum tightness is 10 -3 Pa) After preparing a layer of copper layer with a thickness of 20 nanometers, the substrate is inserted into an aqueous dispersion containing monodisperse 290nm silica microspheres (the volume percentage of silica microspheres is 0.1%, and the degree of dispersion is 5 %) at a constant temperature of 65°C to obtain a unitary patterned colloidal photonic crystal film with a thickness of 2 microns on the surface of the substrate;

[0034] 2) Soak the substrate obtained in step 1) in an acetone solvent for 10 minutes, and then ultrasonicate for 2 seconds at an ultrasonic power of 2...

Embodiment 3

[0037] 1) Spin-coat a layer of photoresist with a thickness of 2 microns on a clean and hydrophilic glass substrate. After etching, obtain patterned substrate, on this patterned substrate, use vacuum evaporation method (vacuum degree is 10 -3 Pa) prepare one deck thickness to be the chromium layer of 2 nanometers, on the chromium layer, use vacuum evaporation method again (vacuum tightness is 10 -3 Pa) After preparing a layer of copper layer with a thickness of 20 nanometers, insert the substrate into an aqueous dispersion containing monodisperse 280nm silica microspheres (the volume percentage of silica microspheres is 0.1%, and the degree of dispersion is 2 %) at a constant temperature of 65°C to obtain a unitary patterned colloidal photonic crystal film with a thickness of 2 microns on the surface of the substrate;

[0038] 2) The monolithic patterned colloidal photonic crystal film obtained in step 1) is subjected to vapor deposition (vacuum degree of 3000Pa, deposition t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a unary or binary patterning colloidal photonic crystal. In the method, a colloidal photonic crystal film grows on a patterning substrate; the non-patterning part of the whole colloidal photonic crystal film is selectively removed through ultrasonic oscillation to obtain a unary patterning colloidal photonic crystal; on the basis of hydrophobic patterning colloidal photonic crystal, another colloidal photonic crystal is continuously deposited to obtain the binary patterning colloidal photonic crystal. The method is easy and practical, and can be used for preparing, in large scale, any pattern of the unary or binary patterning colloidal photonic crystal which has maximum pattern accuracy of reaching less than 10 microns.

Description

technical field [0001] The invention relates to a method for preparing a one-element or two-element patterned colloidal photonic crystal. Background technique [0002] Photonic Crystal, also known as photonic bandgap material, is a composite material with photonic bandgap in a specific direction formed by periodically arranging at least two materials with different dielectric constants. This special microstructure enables photonic crystals to selectively reflect or localize electromagnetic waves of specific wavelengths (frequency), so it is also called a semiconductor of light, which also makes it widely used in the fields of optical devices, lasers, sensing and even communications. Application prospects. [0003] Traditional methods for preparing photonic crystals mainly include "top-down method (Top-Down)" and "bottom-up method (Bottom-Up)". The former is mainly to use microelectronic processing and other methods to obtain precisely controllable periodic structures, whic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/00
Inventor 宋恺丁涛杨国强佟振合
Owner INST OF CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com