Reflected light damage preventing device for high-power semiconductor laser

A semiconductor and laser technology, applied in the laser field to prevent damage

Inactive Publication Date: 2011-05-18
SHANXI FEIHONG LASER TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current devices for preventing reflected light damage of semiconductor lasers are mainly optical isolators, which are only effective fo

Method used

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  • Reflected light damage preventing device for high-power semiconductor laser
  • Reflected light damage preventing device for high-power semiconductor laser
  • Reflected light damage preventing device for high-power semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] like figure 1 As shown, the outgoing light of the semiconductor laser light-emitting chip is P-linearly polarized light, which mainly includes a polarization beam splitter 1 placed at an angle of 45 degrees to the optical axis. , the λ / 4 transmissive wave plate 2 placed perpendicular to the optical axis and the absorber M placed at an angle of 45 degrees to the optical axis. The P-linearly polarized beam T emitted from the semiconductor laser light-emitting chip with a wavelength of λ is still a P-linearly polarized beam after passing through the polarizing beam splitter 1, and then becomes a circularly polarized beam T1 after passing through the λ / 4 wave plate 2, and the circularly polarized beam T1 is irradiated After reaching the workpiece 11, part of the beam T2 reflected by the workpiece 11 returns along the original outgoing optical path, and becomes an S-linearly polarized beam T3 after passing through the λ / 4 wave plate 2 again, and the S-linearly polarized beam...

Embodiment 2

[0027] like figure 2 As shown, wherein, λ / 4 wave plate 2 is a reflective wave plate, which is placed at an angle of 45 degrees to the optical axis, and the rest of the settings are the same as in embodiment 1.

Embodiment 3

[0029] like image 3 As shown, wherein, the polarizing beam splitter 4 is a reflective beam splitter for S-linearly polarized light transmission and P-linearly polarized light, and the rest of the settings are the same as in Embodiment 1.

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PUM

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Abstract

The invention relates to a reflected light damage preventing device for a high-power semiconductor laser, belonging to the technical field of laser. The reflected light damage preventing device comprises a polarization spectroscope, a lambda/4 wave plate and an absorber. In the invention, the polarization spectroscope and the lambda/4 wave plate are sequentially placed in an outgoing light path of a semiconductor laser light-emitting chip, a property that a semiconductor laser beam is a linearly polarized light is utilized, the polarization property of a reflected light beam of a workpiece is changed by the lambda/4 wave plate, and a reflected light is separated from an outgoing light beam of a semiconductor laser array by the polarization spectroscope so that the reflected light cannot irradiate the surface of the semiconductor laser light-emitting chip to prevent damage of the reflected light of the semiconductor laser in the processing of laser materials.

Description

technical field [0001] The invention relates to a laser protection device, in particular to a high-power semiconductor laser device for preventing reflected light damage, and belongs to the field of laser technology. Background technique [0002] In the processing of semiconductor laser materials, when the high-energy laser beam irradiates those materials with low laser absorption rate or high surface finish, the workpiece will reflect a large amount of laser energy, and part of the reflected light will return to the semiconductor laser along the original optical path. Light-emitting chips. Due to the high power density of the laser beam, the reflected light back to the semiconductor laser light-emitting chip will generate a large amount of heat energy in a short period of time, resulting in the burning of the semiconductor laser light-emitting chip, causing the power of the laser to drop, and in serious cases, it will completely damage the semiconductor laser. . In order ...

Claims

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Application Information

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IPC IPC(8): H01S5/00
Inventor 王智勇秦文斌曹银花刘友强
Owner SHANXI FEIHONG LASER TECH
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