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Layer for thin film photovoltaics and a solar cell made therefrom

A photovoltaic device, electronic technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve problems such as interface and complexity increase time and money

Inactive Publication Date: 2011-05-25
GENERAL ELECTRIC CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the large number of processing steps, layers, interfaces, and complexity add to the time and money required to fabricate these solar cells

Method used

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  • Layer for thin film photovoltaics and a solar cell made therefrom
  • Layer for thin film photovoltaics and a solar cell made therefrom
  • Layer for thin film photovoltaics and a solar cell made therefrom

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Embodiment Construction

[0014] The cadmium telluride (CdTe)-based solar devices known in the art typically show relatively low power conversion efficiency, which can be attributed to the relatively low open circuit voltage (V OC ). Another problem for improving the cell efficiency of CdTe solar cells includes the high work function of CdTe. The high work function of CdTe limits the narrow choice of metals that can be employed to form ohmic contacts with the CdTe layer. The metals include platinum and gold, which are commercially unfeasible metals for low-cost mass production of CdTe solar cells. However, although other metals like molybdenum, nickel, chromium, etc. can be used, they form a barrier, for example in the case of p-type CdTe, holes will need to tunnel through the barrier region. Since CdTe has a 1x10 14 And 1x10 15 With a typical carrier density between cubic centimeters, this barrier is relatively large. It has been found that without proper processing of the backside of the CdTe laye...

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PUM

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Abstract

A photovoltaic device is provided. The photovoltaic device comprises an absorber layer comprising a p-type semiconductor, wherein at least one layer is disposed over the absorber layer. The at least one layer is a semiconductor having a higher carrier density than the carrier density of the absorber layer. The at least one layer comprises silicon. The at least one layer comprises a p+-type semiconductor. The absorber layer is substantially free of silicon. A method of forming the photovoltaic device is provided.

Description

Technical field [0001] The invention basically relates to the field of photovoltaics. In particular, the present invention relates to layers used in photovoltaic devices and solar panels manufactured therefrom. Background technique [0002] Solar energy is abundant throughout the year in many parts of the world. Unfortunately, the available solar energy is often not effectively used to produce electricity. The cost of conventional solar cells and the electricity generated by these cells is usually very high. For example, a typical solar cell achieves a conversion efficiency of less than 20%. In addition, solar cells typically include multiple layers formed on a substrate, so solar cell manufacturing typically requires a large number of processing steps. As a result, the large number of processing steps, layers, interfaces, and complexity increase the time and money required to manufacture these solar cells. [0003] Therefore, there is still a need for improvements to the long...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04H01L31/0336H01L31/18
CPCH01L31/0296H01L31/1836Y02E10/50
Inventor B·A·科尔瓦尔Y·A·奚F·R·艾哈迈德J·N·约翰逊
Owner GENERAL ELECTRIC CO