Semiconductor element and manufacturing method therefor
一种半导体、元件的技术，应用在功率半导体器件领域，能够解决MOSFET特性降低、无法获得高成品率、导通电阻增大等问题，达到确保接触面积、接触电阻抑制、降低导通电阻的偏差的效果
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no. 1 Embodiment approach
[0147] refer to Figure 1 to Figure 4 , the first embodiment of the semiconductor element of the present invention will be described. The semiconductor element of this embodiment is a vertical MOSFET using silicon carbide.
[0148] The semiconductor element of the present embodiment is composed of a unit including: a semiconductor layer; a source electrode and a drain electrode electrically connected to the semiconductor layer; and a switch for switching the semiconductor element between an on state and an off state. grid electrode. In addition, it also typically has a structure in which a plurality of cells are arranged. Here, a description will be given taking, as an example, a semiconductor element composed of a plurality of cells having a substantially quadrilateral planar shape.
[0149] figure 1 (a) is a cross-sectional schematic diagram which shows the cell of this embodiment, (b) is a top view for demonstrating the arrangement state of several cells.
[0150] f...
no. 2 Embodiment approach
[0227] Hereinafter, a semiconductor element according to a second embodiment of the present invention will be described with reference to the drawings. The semiconductor element of this embodiment is a vertical MOSFET, and differs from the above-mentioned embodiments in that the source region has a polygonal shape on the surface of the semiconductor layer, and the strip-shaped portion of the contact region extends toward the polygonal vertices of the source region.
[0228] After further research by the inventors, it was found that in Figure 41 In the conventional semiconductor element shown above, in addition to the decrease in the contact area between the contact region and the source electrode conductive surface due to the increase in misalignment, there are new problems as follows. Below, refer to Figure 43 (a) and (b) to illustrate the new problem.
[0229] In semiconductor devices such as vertical MOSFETs, current flows instantaneously when the state changes from ON ...
no. 3 Embodiment approach
[0300]Hereinafter, a third embodiment of the semiconductor element of the present invention will be described with reference to the drawings. The semiconductor element of this embodiment is a vertical MOSFET using silicon carbide, and is different from the semiconductor element of the above-mentioned embodiment in that it is composed of stripe-shaped cells. Here, an example of a comb MOSFET in which each cell has a stripe shape extending in a direction perpendicular to the direction in which electrons flow into the channel will be described.
[0301] Figure 36 (a) is a cross-sectional schematic diagram showing an example of a unit in this embodiment, Figure 36 (b) is a top view for explaining the cell arrangement in the semiconductor element of the present embodiment. For simplicity, pair with figure 1 The components shown in (a) and (b) that are the same as those shown in (b) are denoted by the same reference signs.
[0302] unit 300 because it has the same figure 1 ...
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