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Method for cleaning pipeline sprayed with silicon-containing bottom anti-reflection coating

A bottom anti-reflection and pipeline technology, applied in cleaning methods and appliances, chemical instruments and methods, circuits, etc., can solve problems such as difficult to effectively remove, increase production costs, etc., to eliminate defects, increase production costs, and improve quality products rate effect

Inactive Publication Date: 2011-06-08
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this H 2 SO 4 with H 2 o 2 The mixed solvent of Si-BARC is relatively acidic, and the production pipelines of spraying Si-BARC are generally made of rubber materials, so H 2 SO 4 with H 2 o 2 The mixed solvent used to clean the production pipeline will corrode the production pipeline at the same time, so it is difficult to effectively remove the above-mentioned Si-BARC defects
[0008] Therefore, a new effective cleaning method is needed, which can completely remove the floc crystals formed by Si-BARC, eliminate Si-BARC defects, improve the yield of devices, and avoid damage to the production pipeline to avoid the formation of Si-BARC flocs. The Si-BARC layer needs to be re-formed after crystallization, resulting in an increase in production costs

Method used

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  • Method for cleaning pipeline sprayed with silicon-containing bottom anti-reflection coating
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  • Method for cleaning pipeline sprayed with silicon-containing bottom anti-reflection coating

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Embodiment Construction

[0022] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0023] In order to thoroughly understand the present invention, detailed steps will be proposed in the following descriptions to illustrate how the present invention selects a solvent that will not corrode the production pipeline and can effectively dissolve Si-BARC crystals to clean the production pipeline In order to solve the problem of Si-BARC crystal defects in the wafer. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are descri...

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Abstract

The invention discloses a method for cleaning a pipeline sprayed with a silicon-containing bottom anti-reflection coating (Si-BARC). The method comprises the step of cleaning the pipeline by using solution containing hydrofluoric acid and ammonium fluoride. The concentration of the ammonium fluoride in the solution is 35 to 38 percent, and the concentration of the hydrofluoric acid is 0.3 to 5 percent. The mass ratio of the hydrofluoric acid to the ammonium fluoride in the solution is 1:6-1:120. The cleaning method can thoroughly remove flocculent crystal formed by the Si-BARC, eliminate the defects of the Si-BARC and improve the yield of a device, cannot damage the production pipeline, and can avoid improving the production cost by reforming the Si-BARC after the Si-BARC flocculent crystal is formed.

Description

technical field [0001] The present invention relates to semiconductor manufacturing processes, and more particularly to methods for cleaning pipelines sprayed with silicon-containing bottom anti-reflective coatings. Background technique [0002] With the continuous development of integrated circuits, the minimum line width of transistors continues to shrink. First, the lines defined by the photolithography process are required to be narrower and narrower. Of course, the requirements for the etching process are also getting higher and higher. In order to meet the requirements of lithography, in addition to the continuous upgrading of lithography equipment, people also use other technologies to improve the quality and precision of lithography, and the use of anti-reflective coating (ARC) is one of them. The function of ARC is to prevent the reflection of light at the substrate interface after passing through the photoresist. This is because the reflected light returning to the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B9/027H01L21/00
Inventor 安辉任亚然黄宜斌刘思南
Owner SEMICON MFG INT (SHANGHAI) CORP