Method for measuring temperature of cavity of epitaxial equipment

A technology of epitaxy and equipment, applied in thermometers, thermometers with directly heat-sensitive electric/magnetic elements, measuring devices, etc., can solve problems such as inability to accurately measure temperature distribution, achieve high reliability and accuracy, and operate Simple, Data-Comprehensive Effects

Inactive Publication Date: 2011-06-08
CSMC TECH FAB1 +1
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Problems solved by technology

These two methods of measuring the temperature of the epitaxial cavity can only measure the temperature of seve

Method used

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  • Method for measuring temperature of cavity of epitaxial equipment
  • Method for measuring temperature of cavity of epitaxial equipment
  • Method for measuring temperature of cavity of epitaxial equipment

Examples

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Example Embodiment

[0022] figure 1 It is a flow chart of a method for measuring the temperature of the cavity of an epitaxy device in an embodiment, which includes the following steps:

[0023] Step S10, grow an oxide layer.

[0024] Prepare a wafer, use a P-type wafer with a substrate resistivity of 15-25 ohm·cm (ohm·cm), and then grow an oxide layer on the wafer. The thickness of the oxide layer can be In this embodiment, the thickness of the oxide layer is

[0025] Step S20, ion implantation.

[0026] Ion implantation is performed on the wafer on which the oxide layer has been grown. Due to the injection of P+ ions on the high-resistance substrate, the P+ ions activate during the high temperature process to release electrons e-. The higher the temperature, the more electrons e- are released, and the lower the sheet resistance. In one embodiment, when performing P+ ion implantation, the energy is 80 kiloelectron volts (KeV), and the dose / concentration is 6×10 per square centimeter 13 Atoms, and th...

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Abstract

The invention relates to a method for measuring temperature of a cavity of epitaxial equipment. The method comprises the following steps of: growing an oxide layer; performing ion implantation; performing an annealing process in the cavity of the epitaxial equipment; completely stripping off the oxide layer and measuring predetermined square resistance distribution; and acquiring corresponding temperature distribution according to a measured square resistance value and temperature-resistance relationship so as to measure the temperature of the epitaxial equipment. In the method for measuring the temperature of the cavity of the epitaxial equipment, the ion implantation is adopted and the annealing is performed in the cavity of the epitaxial equipment, so that the predetermined square resistance distribution is measured, then the corresponding temperature distribution is acquired, and overall temperature distribution of each region in the cavity of the epitaxial equipment is acquired to completely monitor the temperature of the cavity of the epitaxial equipment.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a method for measuring the temperature of a cavity of an epitaxy device. Background technique [0002] At present, there are mainly two types of temperature tests for epitaxial equipment. One is to use high-temperature infrared temperature measurement to test the temperature in a designated area through a special observation point on the quartz cover; the other is to use thermal resistance and place the temperature-sensing resistance The specified position of the cavity is used for temperature measurement. These two methods of measuring the temperature of the epitaxial cavity can only measure the temperature of several locations, and cannot accurately measure the temperature distribution of all regions in the epitaxial cavity. Contents of the invention [0003] Based on this, it is necessary to provide a method for measuring the cavity temperature of the epitaxial equipment that can ...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/66G01K7/16
Inventor 吴俊张元
Owner CSMC TECH FAB1
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