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Method for improving surface characteristic of diffusion plate

A technology of surface characteristics and diffuser plates, applied in the field of diffuser plates, can solve problems such as performance differences, improvement, and influence on the surface properties of diffuser plates 12

Inactive Publication Date: 2013-01-23
GLOBAL MATERIAL SCI
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  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the by-products produced in the process reaction, such as silicon nitride, amorphous silicon, polysilicon, silicon oxide, boron-doped amorphous silicon and phosphorus-doped amorphous silicon, etc., will be deposited on the surface of the diffusion plate 12, when diffused After the plate 12 has been used for a period of time, the process environment will affect the surface characteristics of the diffuser plate 12, such as the surface bombardment of excited ions, the stress of the deposited film, and the reaction of highly active elements such as fluorine, chlorine, and oxygen with the aluminum substrate of the diffuser plate 12 will affect the surface. characteristics, plus the cleaning (Cleaning) and refurbishment (Refurbishment) process leads to the increase of the mathematical average roughness (Ra) of the surface of the diffusion plate, the degradation of the surface characteristics of the above-mentioned diffusion plate 12 will cause the performance of the subsequent process response to be different from that of the new product. difference, it may even become a source of dust particles (Particles) due to the decrease in adhesion to the deposited film

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Embodiment Construction

[0011] The specific implementation of the method for improving the surface properties of the diffuser plate provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0012] Please refer to the attached figure 2 Shown is a process flow chart of the method for improving the surface characteristics of the diffusion plate according to the present invention, including the following steps: step S200, cleaning the surface of the diffusion plate; step S210, sandblasting the surface of the diffusion plate; step S220 , using a first acidic solution to remove oxides on the surface of the diffusion plate; step S230, using a second acidic solution to anodize the diffusion plate to form an anodic plating mold on the surface of the diffusion plate; step In S240, an alkaline solution is used to remove the anodic plating pattern on the surface of the diffusion plate.

[0013] In step S200, the surface of the diffusion plate is cleaned ...

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Abstract

The invention provides a method for improving surface characteristic of a diffusion plate. The method comprises the following steps of: cleaning the surface of the diffusion plate; performing abrasive blasting on the surface of the diffusion plate; and removing the oxide on the surface of the diffusion plate by using first acidic solution. By the method, the surface characteristic of the diffusion plate can be recovered to be the same as that of a new product as much as possible.

Description

【Technical field】 [0001] The invention relates to a diffusion plate in the field of plasma technology, in particular to a method for improving the surface characteristics of a diffusion plate used in plasma-assisted chemical vapor deposition equipment. 【Background technique】 [0002] In the manufacturing process of liquid crystal display devices, a large number of components such as thin film transistors (Thin Film Transistor, TFT) must be fabricated on the glass substrate first, please refer to the attached figure 1 As shown, it is a schematic diagram of a glass substrate 10 in a chamber 1 of a plasma-enhanced chemical vapor deposition (Plasma-Enhanced Chemical Vapor Deposition, PECVD) reaction chamber. In the plasma-assisted chemical vapor deposition reaction chamber cavity 1, the diffusion plate (Diffuser) 12 is used as the upper electrode, and its material is usually aluminum as the base material, and the heater (Susceptor) 14 is used as the lower electrode, wherein the ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F17/00C23G1/12C25D11/04C23G1/22
Inventor 朴炳俊苏金种刘芳钰
Owner GLOBAL MATERIAL SCI