Parasitic lateral PNP triode in SiGe heterojunction bipolar transistor process

Abstract

The invention discloses a parasitic lateral PNP triode in a SiGe heterojunction bipolar transistor process. An active region is isolated by shallow trench field oxygen. The triode comprises a collector region, a base region and an emitter region, wherein the base region and the collector region are formed in the active region by ion implantation, and are laterally connected; the bottoms of the base region and the collector region are connected with an N-type burial layer and a P-type burial layer respectively; the N-type burial layer and the P-type burial layer are formed at the bottoms of adjacent shallow trenches of the base region and the collector region; the emitter region is formed on a part of upper area of the base region, and is at a lateral distance away from the collector base; the collector region and the base region are both picked-up by forming deep hole contact in the shallow trench field oxygen corresponding to the tops of the collector region and the base region; and the emitter region is picked-up by heavily-doped polycrystalline silicon connected with the top of the emitter region. The triode provided by the invention has a relatively smaller area and relatively lower conduction resistance, can be used as an output device in a high speed and high gain heterojunction bipolar transistor circuit, can provide more than one device for the circuit without additional process conditions, and also can reduce the production cost.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit device, in particular to a parasitic lateral PNP transistor in a SiGe HBT process. Background technique [0002] In radio frequency applications, higher and higher device characteristic frequencies are required. Although RFCMOS can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet radio frequency requirements. For example, it is difficult to achieve characteristic frequencies above 40GHz, and advanced technology The research and development cost of compound semiconductors is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high material cost and small size, and the toxicity of most compound semiconductors, its application is limited. SiGe HBT is a good choice for UHF devices. First, it utilizes the energy band difference between SiGe and Si to improve the carrier inject...

AI Technical Summary

Problems solved by technology

The device technology is mature and reliable, but the main disadvantages are: 1. The epitaxy cost of the collector area is high; 3. The deep trench isolation process is complicated and the cost is high

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