Method for performing low-temperature metal bonding on InGaAs and GaAs

A low-temperature metal bonding technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve problems such as long bonding time and high requirements for operators, and achieve shortened bonding time and repeatability sex high effect

Active Publication Date: 2011-06-29
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Method for performing low-temperature metal bonding on InGaAs and GaAs
  • Method for performing low-temperature metal bonding on InGaAs and GaAs
  • Method for performing low-temperature metal bonding on InGaAs and GaAs

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[0054] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0055] The present invention is a method for low-temperature metal bonding of InGaAs and GaAs using a vacuum bonding machine, such as figure 1 As shown, the method includes the following steps:

[0056] Step 1: Clean the InGaAs epitaxial wafer polished on one side to remove organic matter on the surface;

[0057] Step 2: Evaporate a metal layer on the cleaned InGaAs epitaxial wafer;

[0058] Step 3: performing photoetching on the InGaAs epitaxial wafer to obtain an InGaAs epitaxial wafer with narrow metal strips;

[0059] Step 4: removing the photoresist on the surface of the InGaAs epitaxial wafer by plasma etching;

[0060] Step 5: Clean the GaAs epitaxial wafer to remove organic matter on the surface;

[0061] Step...

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Abstract

The invention discloses a method for performing low-temperature metal bonding on InGaAs and GaAs. The method comprises the following steps of: cleaning a single-side polished InGaAs epitaxial wafer to remove organic substances on the surface of the wafer; performing evaporation on the cleaned InGaAs epitaxial wafer to form a metal layer; performing photoresist etching on the InGaAs epitaxial wafer to obtain the InGaAs epitaxial wafer with a narrow metal strip; removing a photoresist on the surface of the InGaAs epitaxial wafer by plasma etching; cleaning a GaAs epitaxial wafer to remove organic substances on the surface of the wafer; attaching the cleaned GaAs epitaxial wafer to the InGaAs epitaxial wafer which is subjected to the plasma etching so as to obtain an attached wafer; oppositely arranging the attached wafer in a vacuum bonding machine for bonding and performing thermal treatment to remove vapor of a bonding interface; and thinning the bound wafer and corroding off the GaAs substrate of the bound wafer. By the method, the low-temperature metal bonding of the InGaAs and the GaAs is realized.

Description

technical field [0001] The invention relates to the technical field of growth of semiconductor heterojunction materials, in particular to a method for low-temperature metal bonding of InGaAs and GaAs, using a vacuum bonding machine to realize low-temperature III-V group materials, III-V group materials and Low-temperature metal bonding between materials such as Si (Ge, GaN). Background technique [0002] Optoelectronic devices are becoming more and more integrated and miniaturized. The technology of using bonding technology to bond heterojunction semiconductor materials together to prepare various semiconductor devices such as lasers and detectors has attracted more and more attention. This technology is to combine two wafers with flat and clean surfaces under certain conditions through chemical bonds on the surface, without being limited by the crystal lattice and crystal orientation of the two wafer materials. Using bonding technology to combine new structural materials h...

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Application Information

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IPC IPC(8): H01L21/02H01L21/20H01L31/18
CPCY02P70/50
Inventor 郑婉华彭红玲渠宏伟马绍栋
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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