71results about How to "Shorten bonding time" patented technology

The invention discloses a method for performing low-temperature metal bonding on GaAs and Si. The method comprises the following steps of: cleaning a single-side polished GaAs epitaxial wafer to remove organic substances on the surface of the wafer; performing photoresist etching on the GaAs epitaxial wafer to obtain the GaAs epitaxial wafer with a narrow strip; performing evaporation on the GaAs epitaxial wafer to form a metal layer; removing a photoresist by a stripping method to obtain a metal strip with a certain thickness; cleaning a Si epitaxial wafer to remove organic substances on the surface of the wafer; treating the surface of the Si epitaxial wafer by using H2SO4 solution and RCAl solution and attaching the cleaned Si epitaxial wafer to the GaAs epitaxial wafer so as to obtain an attached wafer; oppositely arranging the attached wafer in a vacuum bonding machine for bonding and performing thermal treatment to remove vapor of a bonding interface; and thinning the bound wafer and corroding off the GaAs substrate of the bound wafer. By the method, the low-temperature metal bonding of the GaAs and the Si is realized; and the method can be extended to the bonding between two III-V groups (or materials such as Si, Ge and the like of an IV group).

The invention provides a parallel connection combined type ultrasonic energy transferring device, which comprises a parallel connection combined type supersonic wave amplitude transformer, a piezoelectricity ultrasonic transducer as well as a working cleaver on front end of the amplitude transformer. Two sets of unidirectional vibration amplitude transformer are rigidly connected with each other on working end, and the parallel connection combined type supersonic wave amplitude transformer is fixed on a movable flatform via an elastic beam. The invention provides a novel parallel connection combined type ultrasonic energy transferring device, which is used to increase lead bond efficiency, wherein, the requirement of increasing supersonic wave lamplitude transformer end cleaver track cover area is satisfied, at the same time, ultrasonic energy density is increased, bond time is reduced, and bond efficiency is increased.

The invention discloses a series composite structure double-frequency and multi-amplitude piezoelectric ultrasonic transducer applied to a thermal ultrasonic wire bonding and sealing process of an integrated circuit chip. The transducer is composed of two sets of double-ended radiating piezoelectric oscillators and two two-stage mechanical variable-amplitude poles with different amplification factors. The transducer can work at the frequency near the frequency of 60 kHz or 120 kHz and has three driving modes. Under simple harmonic excitation signals with the same frequency, the transducer canobtain multiple amplitude outputs to meet the different requirements of the wire bonding process of the integrated circuit chip and improve the bonding connection efficiency and reliability. Meanwhile, clamping mechanisms of the composite structure ultrasonic transducer adopt flexible flange clamping mechanisms formed by circular arc hinges, the influence of the clamping rack disturbance torque onthe ultrasonic transmission efficiency in the axial ultrasonic transmission process of the variable-amplitude pole can be effectively lowered, and the utilization rate of ultrasonic energy is increased.

The invention relates to an orthodontic bracket indirect bonding precise positioning system and an application method. The orthodontic bracket indirect bonding precise positioning system comprises a local positioning tray (1), a rear right tooth transfer arch-shaped rod (2), a rear left tooth transfer arch-shaped rod (3) and a front tooth transfer arch-shaped rod (7). The local positioning tray (1) comprises a first single side positioning local tray body (10) and a second single side positioning local tray body (11) which are symmetrically arranged, and a detachable spring ejecting rod (12) is installed between the first single side positioning local tray body (10) and the second single side positioning local tray body (11). By means of the orthodontic bracket indirect bonding precise positioning system and the application method, a bracket can be more precisely arranged; the bonding time is shortened; a patient feels more comfortable, and an upper bracket for intraoral teeth can be easily and quickly bonded clinically. In addition, healthier human engineering is achieved through indirect bonding, three-dimensional control over the teeth can be conveniently achieved, facial form improvement can be better achieved, and a good correction effect can be obtained.

Provided are a solder ball bonding method and a solder ball bonding device for performing bonding of a plurality of electrode portions formed on objects to be bonded by melting solder balls. The solder balls are suctioned by using a plurality of suction nozzles that follow the electrode portions of the objects to be bonded, and conveyed onto the electrode portions. A laser irradiation portion that is positioned above the suction nozzles is then moved in a direction along which the suction nozzles are arranged, while the solder balls are irradiated with laser light passing through suction openings of the suction nozzles by using the laser irradiation portion. Accordingly, it is possible to melt the plurality of solder balls on the electrode portions by using only a single laser irradiation portion.

The invention relates to a vulcanization bonding process by a template method for conveying belts, which comprises: cutting a cloth layer and a glue layer of a belt joint part into symmetric gradient according to a certain form and angle, smearing rubber cement for bonding, then heating for a certain time to perform a vulcanization reaction at a certain pressure and temperature so as to allow rawrubber to become vulcanized rubber and provide the joint with optimal bonding strength. The invention introduces a bold innovation based on the original thermal bonding process, establishes a new process of lineation cutting and peeling for vulcanization bonding template; the process greatly shortens the bonding time; the new cutting and bonding process for the vulcanization bonding template method is safe, simple and rapid, saves human and material resources, improves working efficiency, increases the quality by 15-20%, and fills a gap in belt vulcanization bonding technology.

The invention discloses a method for performing low-temperature metal bonding on InGaAs and GaAs. The method comprises the following steps of: cleaning a single-side polished InGaAs epitaxial wafer to remove organic substances on the surface of the wafer; performing evaporation on the cleaned InGaAs epitaxial wafer to form a metal layer; performing photoresist etching on the InGaAs epitaxial wafer to obtain the InGaAs epitaxial wafer with a narrow metal strip; removing a photoresist on the surface of the InGaAs epitaxial wafer by plasma etching; cleaning a GaAs epitaxial wafer to remove organic substances on the surface of the wafer; attaching the cleaned GaAs epitaxial wafer to the InGaAs epitaxial wafer which is subjected to the plasma etching so as to obtain an attached wafer; oppositely arranging the attached wafer in a vacuum bonding machine for bonding and performing thermal treatment to remove vapor of a bonding interface; and thinning the bound wafer and corroding off the GaAs substrate of the bound wafer. By the method, the low-temperature metal bonding of the InGaAs and the GaAs is realized.

A stacked device includes a stacked structure in which a plurality of semiconductors are electrically connected to each other, the semiconductor includes a surface on which a plurality of terminals are provided, the plurality of terminals include a terminal that bonds and electrically connects the semiconductors to each other and a terminal that bonds the semiconductors to each other and does not electrically connect the semiconductors to each other, an area ratio of the plurality of terminals on the surface of the semiconductor is 40% or higher, and an area ratio of the terminals that bond and electrically connect the semiconductors to each other among the plurality of terminals is lower than 50%.

The invention discloses a thin-film structure light-emitting diode (LED) chip based on silver-based metal bonding and a preparation method of the thin-film structure LED chip. AgCuIn alloy is adopted as a bonding metal layer, so that the bonding temperature is reduced and the retention time is shortened; AgCuIn bonding can be finished at relatively low bonding temperature and bonding pressure; the bonding time is shortened; reduction of the injuries to the photoelectric property of an LED epitaxial layer in the bonding process is facilitated; by a bonding metal layer of the AgCuIn alloy, the cavity phenomenon in the bonding process is removed; stress release of the LED epitaxial layer is facilitated; the AgCuIn bonding is high in mechanical property and has good conductivity and heat-conducting property; prolonging of the service life of the LED chip is facilitated; with the AgCuIn as bonding metal, the manufacturing cost of the vertical structure LED chip is greatly reduced; and marketing development of the vertical structure LED chip is facilitated.

Provided is a flip chip bonder including: a pickup flipping collet configured to flip a chip; and a bonding tool configured to receive the chip flipped with the pickup flipping collet from the pickup flipping collet and to bond the received chip to a circuit board. The pickup flipping collet includes a cooling channel through which cooling air flows to cool the pickup flipping collet. Thus, bonding time can be reduced without lowering bonding quality.

The invention discloses a combined type high-pressure forming system for a fully-automatic lifting type in-mould ring-stuck water closet. The combined type high-pressure forming system comprises a water closet ring high-pressure former, a ring de-molding robot, a green body conveying line, a green body conveying and bonding support plate, a mud applying robot, a bonding lifter, a water closet body side mould opening-closing machine, a water closet body high-pressure former and an automatic electrical control system, wherein under the control of the electrical control system, the water closet ring high-pressure former and the water closet body high-pressure former automatically complete green body slip-casting, green body automatic de-molding, automatic conveying, automatic bonding and automatic side mould opening separately, so that a finished product green body is automatically conveyed to the tail end of a forming unit. According to the combined type high-pressure forming system, the labor intensity of a worker is greatly relieved, the bonding time is shortened, and the production efficiency is greatly improved; the labor intensity of the worker is effectively relieved, the forming period of the finished product green body is shortened, and the formation of occupational diseases of staff is reduced; and the green body drying time and green body trimming workload are reduced as a result of high regularity of green body bonding, and degree of contamination on the environment is reduced.

The invention provides an indium antimonide (InSb) wafer and silicon (Si) wafer bonding method. The method includes a first step of carrying out high-temperature ultrasonic boiling and washing in organic solvent on an InSb wafer and a Si wafer which are respectively polished on at least one side and then using deionized water to wash the InSb wafer and the Si wafer, a second step of placing the Si wafer into acid solution for boiling and washing and then using the deionized water to wash, a third step of placing the Si wafer into alkali solution for boiling and washing and then using the deionized water to wash, and a fourth step of enabling the polished surface of the InSb wafer and the polished surface of the Si wafer to face inwards, carrying out laminating, then placing the two laminated wafers into a vacuum bonding machine and carrying out heat treatment to complete bonding of the InSb wafer and the Si wafer. The InSb wafer and Si wafer bonding method is simple in process and has strong practicality.

A battery module includes a plurality of battery cells each having a terminal, and a lead plate having a lead part each of which is joined to the terminal of each of the battery cells to electrically connect the battery cells to each other. The lead part includes an aluminum thin plate having aluminum purity higher than or equal to 99.0%. Surface roughness Ra of a joining surface of the lead part to the terminal is less than or equal to 10 μm. The lead part is electrically connected to the terminal by solid-phase bonding.

The invention relates to the technical field of dental orthodontic bracket positioning production, in particular to a manufacturing technology of a digitized orthodontic guide plate. The manufacturing technology comprises the following steps of 1 model taking; 2 finishing; 3 scanning; 4 tooth arranging; 5 bracket position setting, wherein a bracket is arranged according to the tooth radian obtained after tooth arranging and a tooth body cross positioning method; 6 guide plate frame designing, wherein a guide plate frame is designed according to the shape of an occlusal surface of a tooth model, the width of the guide plate frame is 10 mm, the height is 5 mm, and the length is consistent with the dental arch radian; 7 3D printing of the model, wherein the designed model is output and printed into a resin model; 8 guide plate manufacturing, wherein the printed model is installed into the bracket according to the tooth positions and fixed through light wax; 9 light curing, wherein the surface of the guide plate is pressed to be smooth through light wax, and then the guide plate is put into a light curing machine to be subjected to hardening treatment; 10 brightener applying. The manufacturing technology is simple, the bracket position is very accurate, operation and control are convenient, and the time that a doctor performs adhesion in an oral cavity is shortened by 70%.

The invention discloses a die bonding device of a single-sided polisher. The device comprises a ceramic disk, the upper surface of the ceramic disk is glued with a remaining disk on which a plurality of work-piece holes matched with the sizes and shapes of work-pieces are formed, the work-pieces are embedded into the remaining disk through the work-piece holes, the remaining disk 1 is made from either an epoxy resin glass plate or a blue steel disc, and is directly, firmly and flatly glued with the ceramic disc 2. By adopting the technical scheme provided by the invention, the defects of cushion absorbing and wax pasting can be prevented; furthermore, the work-pieces can be convenient and quick to be placed in the work-piece holes of the remaining disk, and the work-pieces are fixed and reliable, therefore the triviality of wax pasting and the inconsistency defects of the thickness of a wax layer can be saved, the gluing time can be greatly reduced, and the processing precision can be improved; furthermore, the die bonding device is wide in range of application and high in interchangeability.

The invention discloses a glass adhesive and a preparation method thereof. The glass adhesive is prepared from the following components in percentage by weight: 30 to 60 percent of polyurethane resin, 20 to 50 percent of an acrylate monomer, 10 to 30 percent of N, N-dimethylacrylamide, 1 to 5 percent of organic silicon and 1 to 5 percent of a photoinitiator. According to the invention, organic silicon with reaction activity is added in a polymerization reaction of acrylic resin, so that the organic silicon is directly grafted on molecular chains of acrylic ester, polyurethane resin and N, N-dimethylacrylamide in the polymerization reaction process, and the organic silane modified acrylic resin with a cross-linked network structure is obtained, so that the bonding performance, the bonding speed, the high temperature resistance, the weather resistance, the acid and alkali resistance and the yellowing resistance of the adhesive are greatly improved; and the N, N-dimethylacrylamide and the acrylate monomer are copolymerized to generate a polymer with a high polymerization degree, and then the adhesive property of the adhesive is further synergistically improved.