Split-gate flash memory unit and manufacturing method thereof
A technology of flash memory cells and divided gates, which is applied in the field of semiconductor technology, can solve problems such as storage array crosstalk and storage device size reduction, and achieve the effects of reducing operating voltage, reducing area, and increasing density
Active Publication Date: 2015-08-26
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
For the existing split-gate flash memory cells, high voltages must be applied to the control gate and drain for effective programming during programming, and these high voltages will not only cause crosstalk problems during memory array programming, but also detrimental to the size of memory devices. further miniaturization of
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[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0029] In the following description, specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the invention is not limited to the specific implementations disclosed below.
[0030] The method provided by the invention is not only applicable to split-gate flash memory units, but also to general storage devices with a split-gate structure, especially to storage devices with a feature size of 180nm or below.
[0031] This embodiment provides a split-gate flash memory...
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The invention discloses a grid-sharing flash memory unit and a manufacturing method thereof. The grid-sharing flash memory unit comprises a semiconductor substrate, two memory transistors positioned on the semiconductor substrate, and an erase grid positioned between the two memory transistors and embedded in the erase grid of the semiconductor substrate, wherein the two memory transistors share the erase grid, and the erase grid and the memory transistors are electrically separated through a tunneling insulating layer. According to the grid-sharing flash memory unit and the manufacturing method thereof, the erase grid is embedded in the semiconductor substrate, thereby effectively increasing channel length of the device, further avoiding short channeling effect of the device and improving the interference resistance of a memory array in a programming state in a condition of same photo-etching scale, simultaneously being capable of realizing programming under a lower control grid voltage, and improving the programming efficiency of the device. The excellent interference resistance and the lower programming control voltage enable micro shrinkage of the memory to be possible.
Description
technical field [0001] The invention relates to the field of semiconductor technology, in particular to a split-gate flash memory unit and a manufacturing method thereof. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits and digital / analog hybrid circuits, among which storage devices are an important type of digital circuits. Among storage devices, the development of flash memory (flash memory for short) is particularly rapid in recent years. The main feature of flash memory is that it can keep stored information for a long time without power on; and it has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control. a wide range of applications. [0003] The standard physical structure of flash memory is called a memory cell (bit). The str...
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IPC IPC(8): H01L27/115G11C16/04H01L29/423H01L29/10H01L21/8247H10B69/00
Inventor 曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP