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Double-track phase change memory and preparation method thereof

A phase-change memory and dual-track technology, which is applied in semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of difficult manufacturing of small electrodes and uneven heating of phase-change materials, and achieve short response time, low power consumption, Guaranteed normal and stable effect

Inactive Publication Date: 2014-11-26
SHANGHAI XINCHU INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention overcomes defects such as difficulty in manufacturing small electrodes and uneven heating of mushroom head-shaped phase change materials in the prior art, and provides a dual-track phase change memory and a preparation method thereof. Accurate alignment and contact with the metal material (ie, the upper electrode)

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  • Double-track phase change memory and preparation method thereof
  • Double-track phase change memory and preparation method thereof
  • Double-track phase change memory and preparation method thereof

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Embodiment Construction

[0036] The present invention is described in detail below in conjunction with accompanying drawing and embodiment:

[0037] refer to figure 1 , figure 2 , image 3 , Figure 8 It can be seen that 1 is a silicon substrate, 2 is a lower electrode, 3 is an insulating material layer, 4 is a lower heating electrode, 5 is an oxide layer, 6 is a phase change material layer, 7 is an upper electrode, and 8 is a protective layer.

[0038] Wherein, the material of the lower electrode 2 is W; the material of the insulating material layer 3 is SiO 2 The material of the lower heating electrode 4 is TIN; the material of the oxide layer 5 is SiN; the material of the phase change material layer 6 is GST; the material of the upper electrode 7 is AL; the material of the protective layer 8 is SiO 2 .

[0039] The material of the lower electrode 2 can be W, TIN or silicide; the material of the heat insulating material layer 3 can be SiO 2 、Si 3 N 4 ; The material of oxide layer 5 can be ...

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Abstract

The invention provides a double-track phase change memory which comprises a lower electrode, a lower heating electrode, a phase change material layer and an upper electrode, wherein the lower electrode is of a plug shape, and the lower heating electrode, the phase change material layer and the upper electrode are arranged on the lower electrode from bottom to top. The invention also provides a preparation method of the double-track phase change memory. The memory has higher thermal efficiency and a novel structure and can control a contact area of a heating electrode material and a phase change material.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a double-track phase-change memory and a preparation method thereof. Background technique [0002] Memory is an important part of the semiconductor industry. In recent years, with the rapid growth of the consumer electronics market, the market for memory is getting bigger and bigger. At present, the mainstream memories on the market include SRAM, DRAM and FLASH, etc. These memories play an important role in various aspects, but there is no ideal memory at present, which has the high capacity and low cost of DRAM, the high speed of SRAM, The data non-volatile performance of FLASH has the characteristics of high reliability, low operating voltage and low power consumption. These characteristics are exactly the storage technologies required by the new generation of consumer electronics industry, computer industry and other fields. Since the publication of the paper on phase change memory ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24
Inventor 吴关平万旭东陈邦明
Owner SHANGHAI XINCHU INTEGRATED CIRCUIT