Photoetching machine projection objective lens wave aberration field measurement method

A technology of projection objective lens and wave aberration, which is applied in microlithography exposure equipment, testing optical performance, exposure device of photo-plate making process, etc. It can solve the problem that the measurement accuracy of TAMIS technology cannot meet the requirements, the number of Zernike coefficients is limited, and the measurement speed is slow and other problems, to achieve the effect of improved detection speed, improved measurement accuracy, and simple measurement method
CN102129173AActive Publication Date: 2011-07-20SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
4 Cites 16 Cited by

Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
Publication Date
2011-07-20

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a photoetching machine projection objective lens wave aberration field measurement method, which utilizes a measurement system. The system comprises a light source, a lighting system, a mask table, a projection objective lens, a six-dimensional scanning worktable and an image sensor, wherein the light source is used for generating lighting light beams; the lighting system is used for adjusting the lighting light beams; the mask take can carry a test mask and position accurately; the projection objective lens can image a graph on the test mask and has an adjustable numerical aperture; the six-dimensional scanning worktable can position accurately; the image sensor is arranged on the six-dimensional scanning worktable and is used for measuring the image of the graph on the test mask; and the lighting system can adjust a beam waist size, light intensity distribution, a partial coherence factor and a lighting mode. When in measurement, the light intensity distribution of an aerial image is simulated and analyzed and a linear model of a Zernike coefficient is established based on the simulation and analysis first and then the Zernike coefficient is obtained by fitting by utilizing the linear model according to the aerial image measured by the image sensor.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to an on-site measurement method for the wave aberration of a projection objective lens of a lithography machine. Background technique

[0002] Step and scan projection lithography machines for photolithographic processes are well known in the field of very large scale integrated circuit fabrication. The projection objective lens system is one of the most important subsystems in a step-and-scan projection lithography machine. The wave aberration of the projection objective lens deteriorates the lithography imaging quality of the lithography machine and reduces the lithography process window. Wave aberration can be divided into odd aberration and idol aberration. Among them, the odd aberration mainly includes coma and triple wave aberration, and the idol aberration mainly includes spherical aberration and astigmatism. The coma aberration of the projection objective lens makes the imaging position shift after the pattern on the m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More