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Photoetching machine projection objective lens wave aberration field measurement method

A technology of projection objective lens and wave aberration, which is applied in microlithography exposure equipment, testing optical performance, exposure device of photo-plate making process, etc. It can solve the problem that the measurement accuracy of TAMIS technology cannot meet the requirements, the number of Zernike coefficients is limited, and the measurement speed is slow and other problems, to achieve the effect of improved detection speed, improved measurement accuracy, and simple measurement method

Active Publication Date: 2011-07-20
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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Problems solved by technology

[0004] TAMIS technology needs to use more than ten kinds of illumination settings when measuring the wave aberration of the projection objective lens, so the measurement speed is slow
Moreover, the number of Zernike coefficients that can be measured by TAMIS technology is very limited, only limited to Z 5 ,Z 7 ,Z 8 ,Z 9 ,Z 12 ,Z 14 ,Z 15 ,Z 16 ,Z 21 , and with the continuous reduction of lithographic feature size, the measurement accuracy of TAMIS technology is gradually unable to meet the requirements

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  • Photoetching machine projection objective lens wave aberration field measurement method
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  • Photoetching machine projection objective lens wave aberration field measurement method

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[0036] In the following, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings. For the convenience of describing and highlighting the present invention, relevant components existing in the prior art are omitted from the drawings, and the description of these known components will be omitted.

[0037] figure 1 Shown is a schematic structural diagram of the on-site measurement system for wave aberration of the projection objective lens of a photolithography machine according to the present invention. The system includes a light source 1 for generating an illumination beam; an illumination system 2 for adjusting the beam waist size, light intensity distribution, partial coherence factor and illumination mode of the light beam emitted by the light source; a test mask 3 capable of carrying and accurately positioned Mask table 4; a projection objective lens 5 capable of imaging the graphics on the test mask...

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Abstract

The invention discloses a photoetching machine projection objective lens wave aberration field measurement method, which utilizes a measurement system. The system comprises a light source, a lighting system, a mask table, a projection objective lens, a six-dimensional scanning worktable and an image sensor, wherein the light source is used for generating lighting light beams; the lighting system is used for adjusting the lighting light beams; the mask take can carry a test mask and position accurately; the projection objective lens can image a graph on the test mask and has an adjustable numerical aperture; the six-dimensional scanning worktable can position accurately; the image sensor is arranged on the six-dimensional scanning worktable and is used for measuring the image of the graph on the test mask; and the lighting system can adjust a beam waist size, light intensity distribution, a partial coherence factor and a lighting mode. When in measurement, the light intensity distribution of an aerial image is simulated and analyzed and a linear model of a Zernike coefficient is established based on the simulation and analysis first and then the Zernike coefficient is obtained by fitting by utilizing the linear model according to the aerial image measured by the image sensor.

Description

technical field [0001] The invention relates to an on-site measurement method for the wave aberration of a projection objective lens of a lithography machine. Background technique [0002] Step and scan projection lithography machines for photolithographic processes are well known in the field of very large scale integrated circuit fabrication. The projection objective lens system is one of the most important subsystems in a step-and-scan projection lithography machine. The wave aberration of the projection objective lens deteriorates the lithography imaging quality of the lithography machine and reduces the lithography process window. Wave aberration can be divided into odd aberration and idol aberration. Among them, the odd aberration mainly includes coma and triple wave aberration, and the idol aberration mainly includes spherical aberration and astigmatism. The coma aberration of the projection objective lens makes the imaging position shift after the pattern on the m...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G01M11/02
Inventor 袁琼雁李亮杨志勇
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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