Source region of LDMOS (Laterally Diffused Metal Oxide Semiconductor) device and manufacturing method thereof
A source area and area technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as weakness, limited breakdown voltage of LDMOS devices, uneven doping at both ends, etc., to improve breakdown The effect of voltage
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[0032] The present invention will be described below by taking n-type LDMOS as an example. The present invention is also applicable to p-type LDMOS, and it only needs to reverse the doping types of each part in n-type LDMOS.
[0033] see Figure 4a , which is a schematic diagram of the layout of the source region of the LDMOS of the present invention. The source region of the LDMOS is the p-well 172 , which is generally dumbbell-shaped, including a rectangular middle region and polygonal two-end regions. The dimension of the middle area of the rectangle along the direction of the channel is a', which is the dimension of the short side of the rectangle. The minimum size of the region at both ends of the polygon along the channel direction is c', the maximum size is e', c'≥a', 1.5a'≤e'≤2a'. The minimum size of the area at both ends of the polygon in the direction of the vertical channel is d', the maximum size is f', d'≥a', 1.5a'≤f'≤2a'.
[0034] The improvement of the pres...
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