Method for removing photoresistance
A photoresist removal and photoresist technology, applied in the direction of photosensitive material processing, etc., can solve problems affecting device performance, achieve improved performance, reduce damage, and be easy to implement
Active Publication Date: 2012-12-05
SEMICON MFG INT (SHANGHAI) CORP +1
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Such damage can affect the performance of the resulting device
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[0018] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0019] Figures 2A-2D A schematic diagram showing a photoresist removing method according to an embodiment of the present invention. Such as Figure 2A As shown, a semiconductor structure to be reworked is obtained. The structure can be made by traditional damascus craft. Specifically, the low-k / ultra-low-k dielectric layer 101 is covered by CVD on the previous interconnection layer or active device layer 100 . The material of the low-k / ultra-low-k dielectric layer 101 can be selected from various low-k dielectric materials commonly used in the art, includi...
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The invention discloses a method for removing photoresistance, a semiconductor structure comprises an intermediate dielectric layer formed by low-k and / or ultralow-k material, an ODL (optical delay line) bottom anti-reflection layer formed above the intermediate dielectric layer and a silicon-based anti-reflection layer Si-ARC (silicon-anti-reflection coating) layer formed on the ODL bottom anti-reflection layer, as well as a photoresist layer formed above the Si-ARC layer, and the method comprises the following steps: removing the photoresist layer by using the plasma method; using CF4 plasma to remove the Si-ARC layer, wherein at least one of gas flow rate and bias power of CF4 is reduced along with time during the removing process; and removing the ODL bottom anti-reflection layer by using the plasma method. The invention further provides the semiconductor structure and a semiconductor device, which are obtained through the method, as well as an electronic device containing the semiconductor device. By utilizing the method for removing the photoresistance, the unideal photoresistance can be cleaned during the re-processing process, the residue can be reduced, and the damages tothe dielectric layer formed by the low-k and / or ultralow-k material can be further reduced during the photoresistance removing process.
Description
technical field [0001] The invention relates to photoresist removal technology in semiconductor manufacturing process, in particular to a method for removing photoresist during reprocessing. Background technique [0002] In the semiconductor device manufacturing process, the photolithography process is used to transfer the pattern structure printed on the photomask to the surface of the substrate. In the photolithography process, the photoresist is first spin-coated on the substrate, which is then soft-baked to become a solid film. Next, photolithography and development are performed on the photoresist-coated wafer, so that a desired three-dimensional pattern is formed in the photoresist. Based on the three-dimensional pattern, the substrate can be etched so that the pattern on the photoresist penetrates deep into the substrate. After the substrate etch is complete, the photoresist is no longer needed as a protective layer and can be removed. However, if the pattern obtai...
Claims
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IPC IPC(8): G03F7/36
Inventor 孙武
Owner SEMICON MFG INT (SHANGHAI) CORP