Substrate treating solution and method employing the same for treating a resist substrate
A technology of substrate processing and processing method, which is applied in the field of anti-corrosion substrate processing, can solve the problems such as the inability to completely remove residues, and achieve the effects of preventing the decline in yield, controlling the width, and refining the width
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Embodiment 1～4
[0055] An antireflection film having a film thickness of 80 nm was produced on a silicon substrate using a composition for a bottom antireflection film corresponding to KrF exposure (manufactured by AZ Electronics Co., Ltd., KrF-17B (trade name)). A KrF resist composition (manufactured by AZ Electronics Materials Co., Ltd., DX5250P (trade name)) was applied on the film to a film thickness of 440 nm, and baked at 90° C. / 60 seconds to prepare a etched substrate.
[0056] Next, the resist substrate treatment liquid shown in Table 1 was prepared. Specifically, it prepared by dissolving a polymer and other components in ultrapure water, followed by filtration using a UPE filter (pore size: 0.05 μm) manufactured by Nippon Enterprise Corporation. As the polymer, powder of polyvinylpyrrolidone (hereinafter referred to as PVP) (weight average molecular weight: 3,000) or polymaleic acid (weight average molecular weight: 5,000) was used. In addition, as an additional additive, a straig...
Embodiment 3A～3D
[0062] An antireflection film having a film thickness of 80 nm was produced on a silicon substrate using a composition for a bottom antireflection film corresponding to KrF exposure (manufactured by AZ Electronics Co., Ltd., KrF-17B (trade name)). A KrF resist composition (manufactured by AZ Electronics Materials Co., Ltd., DX5250P (trade name)) was applied on the film to a film thickness of 440 nm, and baked at 90° C. / 60 seconds to prepare a etched substrate. The obtained substrate was exposed and developed using a KrF exposure apparatus (manufactured by Canon Co., Ltd., FPA-EX5 (trade name)) to prepare a developed resist substrate having a 200 nm contact hole pattern at a pitch of 1:1.
[0063] On this developed resist substrate, the resist substrate treatment solution prepared in the same manner as in Example 3 was applied, and rinsed with water. The pore size before and after treatment with the resist treatment solution was measured, and the amount of change in the pore s...
Embodiment 5～10 and comparative example 1
[0067] First, the resist substrate treatment liquid shown in Table 3 was prepared. Specifically, it prepared by dissolving a polymer and other components in ultrapure water, followed by filtration using a UPE filter (pore size: 0.05 μm) manufactured by Nippon Enterprise Corporation. As the polymer, polyvinylpyrrolidone (weight average molecular weight: 3,000), polyacrylic acid (weight average molecular weight: 50,000), and polymaleic acid (weight average molecular weight: 5,000) were used. In addition, as an additional additive, a straight-chain alkylsulfonic acid (surfactant) or TGDE (solubility modifier) having about 12 carbon atoms was used.
[0068] Next, a developed resist substrate for evaluation of film thickness reduction and size reduction was prepared. First, an antireflection film having a film thickness of 80 nm was produced on a silicon substrate using a composition for a bottom antireflection film corresponding to KrF exposure (manufactured by AZ Electronics C...
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Abstract
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