Automatic detection method of dry etching silicon slice

Abstract

The invention relates to an automatic detection method of a dry etching silicon slice, which is a method for automatically detecting the dry etching silicon slice in the production process of a solar cell in a photovoltaic industry and mainly relates to a few main parts, i.e. a clamp, a silicon slice, a fixed pen-shaped meter, a floating pen-shaped meter, a floating pen-shaped meter measuring pointer, a travelling mechanism, an electromagnetic strip, an electromagnetic plate and a digital multimeter. The automatic detection method mainly comprises the following steps of: detecting in such a way that the travelling mechanism of the floating pen-shaped meter contacts the edge of the silicon slice at the speed of 0.5-1.0 cm / s during movement through the floating pen-shaped meter measuring pointer; displaying constantly changing resistance values in a loop which consists of the floating pen-shaped meter measuring pointer, the silicon slice, the electromagnetic plate and the digital multimeter through the floating pen-shaped meter measuring pointer and the silicon slice; and then transmitting the resistance values to a computer system for recognition and classification, real-time display and storage. The invention can realize the change from the partial sampling inspection to the overall detection of the silicon slice positioned on the clamp subjected to dry etching and has effect of enhancing detection accuracy and a detection range, convenient and fast detection process, reduced detection difficulty and especially obvious effect on reducing and preventing the phenomenon that a manual detection result is inconsistent with an actual condition.

Description

technical field [0001] The invention relates to a method for detecting intermediate products in the production process of solar cells in the photovoltaic industry, in particular to an automatic detection method for dry etching silicon wafers Background technique [0002] In the current production process of monocrystalline silicon solar cells, after the silicon wafers go through the texturing and diffusion processes, they enter the process of removing the peripheral PN junctions formed during the diffusion process. Most of the silicon wafers in this process adopt the plasma dry method done by etching. After the operator takes out the etched silicon wafer together with the fixture from the etching machine, it is necessary to use the probe of the multimeter to detect the resistance value between any two points on the side edge of the same silicon wafer, and determine the resistance value by the size of the resistance value. Determine whether the etching effect is qualified. ...

AI Technical Summary

Problems solved by technology

Since hundreds of silicon wafers are pressed together on the fixture, and the two probes need to be aimed at any two points on the side edge of one of the silicon wafers, it is very difficult to accurately detect the resistance value between them. It can be done, and it takes a lot of time to detect multiple places

Therefore, in order to save time and catch up with the work progress and output, operators often aim the test pens at random at any two points on the side edge of the same silicon wafer for testing, so that the results are mostly qualified, resulting in test results that are different from the actual ones. big difference

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