Terahertz surface plasma wave temperature control switch and control method thereof

A surface plasmon and temperature control switch technology, applied in waveguide devices, electrical components, circuits, etc., can solve the problems of high production cost, large energy loss, narrow tuning frequency bandwidth, etc., and achieve low production cost and small energy loss , the effect of wide modulation range

Inactive Publication Date: 2013-08-07
NANJING FANGYUAN GLOBAL DISPLAY TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Technical problem: The purpose of the present invention is to provide a terahertz surface plasma wave temperature control switch to solve the technical problems in the background technology such as high production cost, large energy loss, and narrow tuning frequency bandwidth.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Terahertz surface plasma wave temperature control switch and control method thereof
  • Terahertz surface plasma wave temperature control switch and control method thereof
  • Terahertz surface plasma wave temperature control switch and control method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The structure of the terahertz surface plasma wave temperature control switch of the present invention is as follows: two blades are placed in parallel above the intrinsic semiconductor wafer, and a temperature control device is closely attached to the lower part of the intrinsic semiconductor wafer. The distance between the edge of the upper two blades and the upper surface of the intrinsic semiconductor wafer is less than the attenuation distance of the maximum frequency terahertz surface plasmon wave in air, and the distance between the two blades is less than the maximum frequency terahertz surface plasmon wave In the propagation distance of the semiconductor surface, the thickness of the intrinsic semiconductor wafer is greater than the attenuation distance of the minimum frequency terahertz surface plasmon wave in the intrinsic semiconductor.

[0022] The characteristic of the intrinsic semiconductor wafer is that its plasma frequency is in the terahertz band at ro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a terahertz surface plasma wave temperature control switch and a control method thereof, which relate to a terahertz surface plasma wave temperature control device and the method for modulating terahertz surface plasma waves by utilizing the characteristic that the frequency of semiconductor plasmas is changed along with temperature. The switch comprises an intrinsic semiconductor wafer (2), two blades (3) and a temperature controller (5), wherein the plasma frequency of the intrinsic semiconductor wafer (2) is in a terahertz wave band at normal temperature; the two blades (3) are arranged in parallel, and are vertical to the intrinsic semiconductor wafer (2); a distance between the knife edge of the blade (3) and the upper surface of the intrinsic semiconductor wafer (2) is less than attenuation distances of terahertz surface plasma waves (4) in air; the blades (3) convert terahertz waves into the terahertz surface plasma waves, and convert the terahertz surface plasma waves into the terahertz waves; and the temperature controller (5) controls the temperature of the intrinsic semiconductor wafer (2), thereby changing the carrier concentration of the intrinsic semiconductor wafer.

Description

technical field [0001] The invention relates to a terahertz surface plasma wave temperature control device and a method for modulating the terahertz surface plasma wave by utilizing the characteristics that the intrinsic semiconductor plasma frequency varies with temperature. Background technique [0002] Terahertz (THz) waves usually refer to frequencies between 0.1 and 10THz (1THz=10 12 Hz) electromagnetic wave, its wavelength is between microwave and near infrared. In the frequency domain, the terahertz wave is in the transition region from the macroscopic to the microscopic, and in the radiation mechanism, the terahertz wave is in the transition region from the classical electromagnetic radiation to the quantum transition. For a long time, due to the lack of effective terahertz wave generation, modulation, and detection methods, the application of electromagnetic waves in this frequency band is very limited, so that this wave band is called the terahertz gap in the elec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/15
Inventor 杨涛何浩培仪明东黄维李兴鳌
Owner NANJING FANGYUAN GLOBAL DISPLAY TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products