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Composition for low downforce chemically mechanical polishing of coppers in ULSI (Ultra Large Scale Integrated Circuit) multi-layered copper wiring

A polishing composition and chemical-mechanical technology, used in polishing compositions containing abrasives, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as affecting production capacity, eliminate negative effects, improve polishing removal rate, Balance the effect of chemical corrosion

Active Publication Date: 2013-12-11
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, reducing the pressure polishing will seriously affect the production capacity

Method used

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  • Composition for low downforce chemically mechanical polishing of coppers in ULSI (Ultra Large Scale Integrated Circuit) multi-layered copper wiring
  • Composition for low downforce chemically mechanical polishing of coppers in ULSI (Ultra Large Scale Integrated Circuit) multi-layered copper wiring
  • Composition for low downforce chemically mechanical polishing of coppers in ULSI (Ultra Large Scale Integrated Circuit) multi-layered copper wiring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Prepare 1000 grams of copper polishing solution: Add 10 grams of glycine, 5 grams of ammonium persulfate and 0.1 grams of benzotriazole into 800 grams of deionized water in sequence, stir to dissolve, and after uniformity, slowly stir and add 100 grams of 30% 50 nanometer disulfide Silicon oxide hydrosol, before polishing, add 30 grams of 30% oxidant hydrogen peroxide solution, use KOH to calibrate the pH value to 10.0, and finally add water to make up 1000 grams and stir evenly, then perform copper polishing with a pressure of 0.5Psi, and the polishing removal rate The MRR is 358.1nm / min, and the surface roughness Sa is 5.73nm.

Embodiment 2

[0038] Prepare 1000 grams of copper polishing solution: Add 10 grams of glycine, 10 grams of ammonium persulfate and 0.1 grams of benzotriazole to 800 grams of deionized water in sequence, stir to dissolve, and after uniformity, slowly stir and add 100 grams of 30% 50 nanometer disulfide Silicon oxide hydrosol, before polishing, add 30 grams of 30% oxidant hydrogen peroxide solution, use KOH to calibrate the pH value to 10.0, and finally add water to make up 1000 grams and stir evenly, then perform copper polishing with a pressure of 0.5Psi, and the polishing removal rate The MRR is 376.0nm / min, and the surface roughness Sa is 5.80nm.

Embodiment 3

[0040] Prepare 1000 grams of copper polishing solution: add 10 grams of glycine, 20 grams of ammonium persulfate and 0.1 grams of benzotriazole to 800 grams of deionized water in sequence, stir to dissolve, and after uniformity, slowly stir and add 100 grams of 30% 50 nanometer two Silicon oxide hydrosol, before polishing, add 30 grams of 30% oxidant hydrogen peroxide solution, use KOH to calibrate the pH value to 10.0, and finally add water to make up 1000 grams and stir evenly, then perform copper polishing with a pressure of 0.5Psi, and the polishing removal rate The MRR is 487.6nm / min, and the surface roughness Sa is 4.07nm.

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Abstract

The invention provides a composition for low downforce chemically mechanical polishing of coppers in ULSI (Ultra Large Scale Integrated Circuit) multi-layered copper wiring, which belongs to the field of chemically mechanical polishing aqueous composition. The invention provides an aqueous composition suitable for polishing coppers on a semiconductor chip under a downforce of less than 1.0 Psi (6.89 kPa); and the composition contains abrasive, an oxidant, a pH regulator, a buffering agent and water and also mainly contains a sulfur-containing corrosion balancing agent applicable to a situation with low downforce weak mechanical effect. Low downforce polishing is carried out on the coppers in the ultra large scale integrated circuit multi-layered copper wiring by using the polishing composition provided by the invention, high smoothing efficiency and high polishing speed are obtained and polishing defects can be furthest avoided.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing water-based composition, in particular to a composition for chemical mechanical polishing of ULSI multilayer copper wiring copper. Background technique [0002] An integrated circuit consists of millions of active elements formed on or in a silicon substrate, and these isolated active elements are interconnected to form functional circuits and components. Generally, metal wiring is used for interconnection, that is, various metals and alloys are filled in the etched vias and contacts, including titanium (Ti), titanium nitride (TiN), tantalum (Ta), aluminum (Al), Copper (Cu), silicon-aluminum (Si-Al), tungsten (W), or combinations thereof. With the further reduction of VLSI feature size in the semiconductor industry, reliability problems caused by RC delay and electromigration of interconnect lines have gradually become the key factors affecting circuit speed. Because Cu has low resis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02H01L21/321
Inventor 路新春戴媛静刘宇宏潘国顺雒建斌
Owner TSINGHUA UNIV
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