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Method for preparing Zn/ZnO nano tube by direct current deposition

A nanotube and direct current technology, applied to the thickness of the tube wall, can solve the problems of not being able to strictly control the length of the nanotube, the thickness of the tube wall, high reaction temperature, complicated operation, etc., and achieve adjustable and stable parameters, simple preparation process and short time Effect

Inactive Publication Date: 2012-07-25
HEBEI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing Zn / ZnO nanotubes by direct current electrodeposition, to overcome the complicated operation in the existing method, high reaction temperature, high cost, and the inability to strictly control the length and wall thickness of the nanotubes. And shortcomings such as pipe diameter

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  • Method for preparing Zn/ZnO nano tube by direct current deposition
  • Method for preparing Zn/ZnO nano tube by direct current deposition
  • Method for preparing Zn/ZnO nano tube by direct current deposition

Examples

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Embodiment 1

[0026] (1) First, anneal high-purity aluminum foil with a purity of 99.999% in high-purity argon at 400°C for 5 hours, and then electrochemically polish the annealed aluminum foil with a polishing current of 1A and a polishing time of 5min;

[0027] (2) placing the polished aluminum foil in an acetone solution to carry out ultrasonic treatment to remove organic matter on its surface;

[0028] (3) carry out the first oxidation of the clean aluminum foil in 0.3mol / L oxalic acid electrolyte, the time is 12h, and the oxidation voltage is 45V;

[0029] (4) the aluminum oxide film generated after the first oxidation is removed with a mixed solution of chromic acid and perchloric acid, and then the second oxidation is carried out under the same conditions as in step (3);

[0030] (5) remove the aluminum base behind the aluminum oxide film obtained by secondary oxidation with saturated cupric chloride solution, and carry out hole expansion treatment in a 60g / L phosphoric acid solution...

Embodiment 2

[0035] (1) First, anneal high-purity aluminum foil with a purity of 99.999% in high-purity argon at 400°C for 5 hours, and then electrochemically polish the annealed aluminum foil with a polishing current of 1A and a polishing time of 5min;

[0036] (2) placing the polished aluminum foil in an acetone solution to carry out ultrasonic treatment to remove organic matter on its surface;

[0037] (3) carry out the first oxidation of the clean aluminum foil in 0.3mol / L oxalic acid electrolyte, the time is 12h, and the oxidation voltage is 45V;

[0038] (4) the aluminum oxide film generated after the first oxidation is removed with a mixed solution of chromic acid and perchloric acid, and then the second oxidation is carried out under the same conditions as in step (3);

[0039] (5) remove the aluminum base behind the aluminum oxide film obtained by the second oxidation with saturated cupric chloride solution, and carry out hole expansion treatment in a concentration of 60 g / L phosp...

Embodiment 3

[0045] (1) First, anneal high-purity aluminum foil with a purity of 99.999% in high-purity argon at 400°C for 5 hours, and then electrochemically polish the annealed aluminum foil with a polishing current of 1A and a polishing time of 5min;

[0046] (2) placing the polished aluminum foil in an acetone solution to carry out ultrasonic treatment to remove organic matter on its surface;

[0047] (3) carry out the first oxidation of the clean aluminum foil in 0.3mol / L oxalic acid electrolyte, the time is 12h, and the oxidation voltage is 45V;

[0048] (4) the aluminum oxide film generated after the first oxidation is removed with a mixed solution of chromic acid and perchloric acid, and then the second oxidation is carried out under the same conditions as in step (3);

[0049] (5) remove the aluminum base behind the aluminum oxide film obtained by secondary oxidation with saturated cupric chloride solution, and carry out hole expansion treatment in 60g / L phosphoric acid solution;

...

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Abstract

The invention discloses a method for preparing a Zn / ZnO nano tube by direct current deposition. The method comprises the following steps: plating a Cu layer on an AAO (Anodic Aluminum Oxide) template to serve as the cathode for direct current deposition; respectively weighing 29g of ZnSO4 and 20g of boric acid, and preparing into 500ml of electrolyte; carrying out direct current deposition to obtain a Zn nano tube; and oxidating in the air to obtain a ZnO nano tube. The method has the advantages of simple operation process and low cost; and by controlling the concentration of the electrolyte and the magnitude of the voltage, the wall thickness of the Zn / ZnO nano tube can be controlled, thereby preparing the ZnO nano tube with a controllable length-diameter ratio. The invention provides a new method for the integration of ZnO nano devices.

Description

technical field [0001] The invention relates to a method for preparing Zn / ZnO nanotubes by direct current electrodeposition, in particular to a method capable of precisely controlling the length, wall thickness and diameter of Zn / ZnO nanotubes. It belongs to the technical field of preparation of metal nanotubes or one-dimensional semiconductor nanotube materials. Background technique [0002] In recent years, the nanostructures of semiconductor materials have attracted more and more attention because of their important roles in future nanodevices and systems. As a typical II-VI direct wide-bandgap semiconductor material, zinc oxide (ZnO) has attracted much attention due to its diverse nanostructures, unique optical and electrical properties, and piezoelectric properties. ZnO has gradually emerged as an attractive nanomaterial after carbon nanotubes (CNTs) in future electronic device systems. ZnO is also a multifunctional oxide material, which has excellent properties in va...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/22C25D5/50B82Y40/00
Inventor 孙会元徐芹刘力虎杨玉华顾建军张惠敏
Owner HEBEI NORMAL UNIV