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Method for preparing ZnNi/Ni-ZnO nano-tube through direct current deposition

A direct current and nanotube technology, applied in chemical instruments and methods, zinc oxide/zinc hydroxide, single crystal growth, etc., can solve problems such as the inability to strictly control the length of nanotubes, tube wall thickness, high reaction temperature, and complicated operations , to achieve the effect of low preparation cost, short time and easy operation

Inactive Publication Date: 2011-09-14
HEBEI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing ZnNi / Ni-ZnO nanotubes by direct current electrodeposition, which overcomes the complex operation, high reaction temperature and inability to strictly control the length and wall thickness of the nanotubes in the existing preparation methods. And shortcomings such as pipe diameter

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  • Method for preparing ZnNi/Ni-ZnO nano-tube through direct current deposition
  • Method for preparing ZnNi/Ni-ZnO nano-tube through direct current deposition
  • Method for preparing ZnNi/Ni-ZnO nano-tube through direct current deposition

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Embodiment 1

[0031] (1) First, anneal high-purity aluminum foil with a purity of 99.999% in high-purity argon at 400°C for 5 hours, and then electrochemically polish the annealed aluminum foil with a polishing current of 1A and a polishing time of 5 minutes;

[0032] (2) Place the polished aluminum foil in an acetone solution for ultrasonic treatment to remove organic matter on its surface;

[0033] (3) Carry out the first oxidation of the clean aluminum foil in 0.3mol / L oxalic acid electrolyte for 12 hours, and the oxidation voltage is 45V;

[0034] (4) the aluminum oxide film generated after the first oxidation is removed with a mixed solution of chromic acid and perchloric acid, and then oxidized for the second time under the same conditions as step (3);

[0035] (5) remove the aluminum base behind the aluminum oxide film obtained by the second oxidation with a saturated cupric chloride solution, and carry out pore expansion treatment in a concentration of 60g / L phosphoric acid solution...

Embodiment 2

[0040] (1) First, anneal high-purity aluminum foil with a purity of 99.999% in high-purity argon at 400°C for 5 hours, and then electrochemically polish the annealed aluminum foil with a polishing current of 1A and a polishing time of 5 minutes;

[0041] (2) Place the polished aluminum foil in an acetone solution for ultrasonic treatment to remove organic matter on its surface;

[0042] (3) Put the clean aluminum foil in the 0.3mol / L oxalic acid electrolyte for the first oxidation time of 12h, and the oxidation voltage is 45V;

[0043] (4) the aluminum oxide film generated after the first oxidation is removed with a mixed solution of chromic acid and perchloric acid, and then oxidized for the second time under the same conditions as step (3);

[0044](5) remove the aluminum base behind the aluminum oxide film obtained by the second oxidation with a saturated cupric chloride solution, and carry out pore expansion treatment in a concentration of 60g / L phosphoric acid solution; ...

Embodiment 3

[0050] (1) First, anneal high-purity aluminum foil with a purity of 99.999% in high-purity argon at 400°C for 5 hours, and then electrochemically polish the annealed aluminum foil with a polishing current of 1A and a polishing time of 5 minutes;

[0051] (2) Place the polished aluminum foil in an acetone solution for ultrasonic treatment to remove organic matter on its surface;

[0052] (3) Carry out the first oxidation of the clean aluminum foil in 0.3mol / L oxalic acid electrolyte for 12 hours, and the oxidation voltage is 45V;

[0053] (4) the aluminum oxide film generated after the first oxidation is removed with a mixed solution of chromic acid and perchloric acid, and then oxidized for the second time under the same conditions as step (3);

[0054] (5) remove the aluminum base behind the aluminum oxide film obtained by secondary oxidation with saturated cupric chloride solution, and carry out pore expansion treatment in a concentration of 60g / L phosphoric acid solution; ...

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Abstract

The invention discloses a method for preparing a ZnNi / Ni-ZnO nano-tube through direct current deposition, which comprises the following steps of: firstly, plating a layer of Cu on an AAO (Anodic Aluminum Oxide) template to be used as a cathode for direct current deposition; respectively weighing 29g of ZnSO4, 6g of NiSO4 and 20g of boric acid, and preparing the chemical reagents into 500ml of electrolyte; then preparing a ZnNi nano-tube through direct current deposition by adopting high voltage; and finally, oxidizing in the air to prepare a Ni-ZnO nano-tube. The method disclosed by the invention is simple to operate, has low cost, and can control the wall thickness of the ZnNi nano-tube by controlling the concentration of the electrolyte and the magnitude of the voltage, thereby preparing the Ni-ZnO nano-tube of which the length-diameter ratio is controllable. The invention provides a novel method for integration of diluted magnetic semiconductor nano-devices, and a magnetic ZnNi nano-tube prepared in the experiment can be applied to biological detection, medical treatment and clinical examination.

Description

technical field [0001] The invention relates to a method for preparing ZnNi / Ni-ZnO nanotubes by using anodized aluminum oxide (AAO) as a template by a direct current electrodeposition method, and belongs to the technical field of preparation of one-dimensional metal magnetic materials or magnetic semiconductor materials. Background technique [0002] In recent years, dilute magnetic semiconductors have attracted much attention due to their unique magnetic ordering phenomenon. On the one hand, because the understanding of its unique magnetic properties involves many fundamental physical issues; on the other hand, these unique magnetic properties have huge potential application prospects. The preparation of room temperature ferromagnetic semiconductor materials, efficient spin injection in semiconductor materials, and spin transport and manipulation in semiconductor structures have become hot topics in the field of semiconductor spintronics. Transition metal doped ZnO is an i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B29/62C01G9/02
Inventor 刘力虎蔡宁顾建军张惠敏李子岳孙会元
Owner HEBEI NORMAL UNIV