The invention discloses a method for preparing large-area single-layer WSe2 monocrystals and mainly solves the problems of complicated process and poor controllability of a traditional preparation method. The method comprises implementing steps as follows: 1, substrates are selected and subjected to RCA standard cleaning, and two substrates are selected, subjected to ultrasonic cleaning with deionized water, acetone and isopropyl alcohol in sequence for 5 min and air-blown; 2, the cleaned substrates are put in a tubular furnace, two quartz boats are prepared and taken as a W boat and an Se boat respectively, and an NaCl solution is dropwise added to the front end of the first substrate and then heated on a hot plate until deionized water is completely vaporized; WO3 is arranged on the first substrate, the first substrate is covered with the second substrate, then the W boat is placed in a high-temperature area, Se is arranged in the Se boat, and the Se boat is placed in a low-temperature area; 3, a cavity is purged, the high-temperature area and the low-temperature area of the tubular furnace are subjected to temperature control respectively, WO3 and Se are subjected to a reaction,WSe2 is produced, and a product is sealed. The method is lower in cost, high in controllability and suitable for preparing the repeatable large-area single-layer WSe2 material.