Chip cutting protection ring of diode based on groove MOSFET (metal-oxide-semiconductor field effect transistor) and manufacturing method thereof
A manufacturing method and technology of guard rings, which are applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of increasing process steps, increasing production costs, and high expenses, so as to simplify the process flow, prevent splitting, The effect of reducing production costs
Active Publication Date: 2013-05-08
GTA SEMICON CO LTD
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Problems solved by technology
However, the method of specially forming chip dicing lines undoubtedly adds a lot of process steps, and some process steps are even expensive, which increases production costs.
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[0030] The present invention will be further described below in conjunction with specific embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.
[0031] figure 2 It is a flowchart of a method for fabricating a trench MOSFET-based diode chip dicing guard ring according to an embodiment of the present invention. As shown in the figure, the manufacturing method starts at step S201. The method can include:
[0032] Executing step S201, providing a semiconductor substrate having a device region and a chip dicing guard ring region surrounding the device region;
[0033] Executing step S202, when the device trench is formed in the device region, an annular trench is synchronously formed in the chip dicing guard ring region;
[0034] Execute step S203, when the gate material is deposited in the device trench, the gate material is also deposited in the annular trench synchronously, and the surface of the chip is etch...
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The invention provides a manufacturing method of a chip cutting protection ring of a diode based on a groove MOSFET (metal-oxide-semiconductor field effect transistor), comprising the steps of: providing a semiconductor substrate which is provided with a device area and a chip cutting protection ring area surrounding the device area; forming a ring-shaped groove synchronously in the chip cutting protection ring area when a device groove is formed in the device area; when grid materials are deposited in the device groove, also depositing the grid materials in the ring-shaped groove synchronously, carrying out back etching on the surface of a chip till the semiconductor substrate is exposed in the device area; and forming an insulating medium layer and a conductive metal layer on the surface of the chip in sequence, filling the insulating medium layer and the conductive metal layer in the ring-shaped groove synchronously in sequence and forming the chip cutting protection ring. Correspondingly, the invention also provides the chip cutting protection ring of the diode based on the groove MOSFET. The chip cutting protection ring formed by the invention plays a role in identifying cutting channels, simultaneously the chip is prevented from splitting in the cutting process, the process flow is simplified and the production cost is reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular, the invention relates to a chip cutting protection ring for a diode based on a trench MOSFET and a manufacturing method thereof. Background technique [0002] At present, in the application field of solar cells, in order to prevent the failure of one of the solar cell units connected in series (such as an open circuit) and the bad situation that the entire solar cell system cannot work, technicians generally work next to each solar cell unit. Connect a diode in parallel. The diode does not work when the solar cell unit is working normally, but once a solar cell unit fails, it will conduct forward, so that the current bypasses the faulty solar cell unit, thus ensuring the normal operation of other solar cell units influences. [0003] Therefore, there is a huge demand for the above-mentioned diodes in the market now. The diodes used have undergone an evolution...
Claims
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IPC IPC(8): H01L21/02H01L21/762H01L23/58H01L29/06
CPCH01L2924/0002
Inventor 陶有飞
Owner GTA SEMICON CO LTD