Preparation method of back contact HIT solar battery based on N-type silicon wafer
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 山东力诺太阳能电力股份有限公司
- Publication Date
- 2011-09-14
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Abstract
Description
technical field
[0001] The invention relates to a method for preparing a solar cell, in particular to a method for preparing a back-contact HIT solar cell on an N-type silicon substrate. Background technique
[0002] The rapid development of the solar energy industry requires an industrialized technology with simple process flow and high photoelectric conversion efficiency to reduce the cost of power generation and achieve the goal of being equal to or lower than the price of mains electricity.
[0003] With the development of industrialization, conventional crystalline silicon cells have made great progress in improving conversion efficiency and reducing costs. However, the technical characteristics of conventional crystalline silicon cells limit the further reduction of their power generation costs, and it is difficult to achieve the goal of the same price as the mains electricity. Various solutions have emerged in the industry, including selective emitter solar cells, ba...