Light-emitting diode (LED) with built-in reflector and preparation method thereof
A technology of light-emitting diodes and mirrors, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of rough substrate surface and limited reflectivity of mirrors, and achieve the effect of reducing defect density, low cost, and improving extraction efficiency
Inactive Publication Date: 2011-09-21
HC SEMITEK CORP
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Problems solved by technology
It can improve the reflectivity of light at the interface between the substrate and the packaging material, and increase the front light extraction rate of the chip, but because the surface of the thinned substrate is rough, there are many scratches, and there are thinned residues left at the scratches , so that the reflectivity of the mirror is limited
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[0021] The following uses the sapphire substrate as an example to illustrate the light-emitting diode with built-in reflector and its preparation method. The steps are:
[0022] 1. Use PECVD to prepare a layer of SiO2 film on the sapphire substrate with a thickness of 1.6 microns, such as figure 1 shown.
[0023] 2. Through photolithography, etch to remove part of SiO2 to form holes, such as figure 2 , image 3 shown. The shape of the hole is an inverted frustum of a circle, the diameter of the upper bottom of the hole is between 3.0 microns, the diameter of the bottom is between 1.0 microns, and the height is between 1.8 microns. The distance between the top and bottom of the holes is 0.5 microns.
[0024] 3. Deposit a GaN epitaxial layer on a graphic substrate, such as Figure 4 Shown, where b is N-type GaN; c is quantum well; d is P-type GaN.
[0025] 4. Remove the GaN epitaxial layer at the scribing lane to expose SiO2.
[0026] 5. Use BOE ultrasonic lateral etchin...
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Abstract
The invention provides a light-emitting diode (LED) with a built-in reflector and a preparation method thereof. The preparation method comprises the following steps: preparing a layer of film on a substrate by using a high-melting point material; etching on the substrate through photoetching and preparing a pattern with the high-melting point material; manufacturing a GaN-based LED epitaxial layer on the pattern formed by using the high-melting point material; putting the epitaxial layer in an etchant solution, and removing the high-melting point material below the GaN epitaxial layer through lateral corrosion so as to form the reflector; and manufacturing an LED chip. The LED with a built-in reflector has the advantages that more light is emerged from a frontal transparent electrode e, thereby improving the extraction efficiency of the LED; and the GaN-based LED epitaxial layer is deposited on the pattern formed by using the high-melting point material, traverse growth is adopted, thus the defect density of the epitaxial layer is also reduced. The whole process is simple, is easy to control and is suitable for large-scale commercial production, and cost is low.
Description
technical field [0001] The invention relates to a light-emitting diode, in particular to a light-emitting diode with a built-in reflector and a preparation method thereof. Background technique [0002] GaN-based light-emitting diodes, because light-emitting diodes of various colors can be produced by controlling the composition of materials, so its related technologies have become the focus of research in recent years. One of the research focuses on GaN-based light-emitting diodes is to understand the luminous characteristics of GaN-based light-emitting diodes, and then improve their luminous efficiency and brightness. The luminous efficiency of GaN-based light-emitting diodes is mainly related to the internal quantum efficiency and extraction efficiency of the diode. At present, some researchers add reflectors to the chip structure to improve the extraction efficiency of GaN-based light-emitting diodes. There are two manufacturing methods: [0003] 1. Laser lift-off techn...
Claims
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IPC IPC(8): H01L33/10H01L33/00
Inventor 张建宝郑如定
Owner HC SEMITEK CORP