Unlock instant, AI-driven research and patent intelligence for your innovation.

Deep ultraviolet semiconductor light-emitting device and manufacturing method thereof

A light-emitting device and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems affecting device performance, high resistance, and poor heat dissipation of ultraviolet light-emitting diodes, so as to enhance light extraction efficiency, promote extraction rate, and ensure The effect of physical stability

Inactive Publication Date: 2011-10-05
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
View PDF6 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high resistance, the heat dissipation of ultraviolet LEDs is not good under high current drive, which affects the performance of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deep ultraviolet semiconductor light-emitting device and manufacturing method thereof
  • Deep ultraviolet semiconductor light-emitting device and manufacturing method thereof
  • Deep ultraviolet semiconductor light-emitting device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Such as figure 2 As shown, a deep ultraviolet semiconductor light emitting device includes: a heat dissipation substrate 200 , a metal structure 110 , a light emitting epitaxial structure 100 and an optical mechanical support structure 320 .

[0046] The heat dissipation substrate 200 is used to support the light-emitting epitaxial structure. It is made of materials with good thermal conductivity, such as ceramics or silicon wafers, and a series of through holes 201 are arranged on it. Considering the stress tolerance of the substrate, its total area is preferably smaller than that of the substrate. 60% of the total area of ​​the seat substrate, about 40% is taken here. The conductive material is filled in the through hole to form a conductive channel 202, which is used to transmit current to the light-emitting epitaxial structure, and to excite the light-emitting layer to emit light.

[0047]The metal structure 110 is composed of a metal reflective layer 111 , an ohm...

Embodiment 2

[0052] This embodiment includes: a preparation method of transferring the illuminant structure to a high thermal conductivity base substrate with a conductive path, a preparation method of the p-layer micro-optical channel, and a preparation method of the optical-mechanical support structure.

[0053] The p-layer micro-optical channel can be realized by dry etching or chemical wet etching. In both techniques, photoresist can be used for protection first. Use photolithography to form the required pattern, then etch the required pattern, remove the photoresist and protective layer, and prepare a layer of metal reflective film layer on the P surface. The highly reflective metal material can be Al, Pt, Ag, etc. , and then prepare the ohmic contact metal structure. The total coverage area of ​​the low-light channel does not exceed 80% of the total area without affecting the conductivity of the P layer. The P-layer low-light channel can greatly improve the luminous efficiency.

[...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a deep ultraviolet semiconductor light-emitting device and a manufacturing method thereof. The semiconductor luminescent device comprises a substrate with a conductive channel, a light-emitting epitaxial structure, and an optical mechanical supporting structure provided with a conductive channel, wherein the light-emitting epitaxial structure consists of a n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer in sequence; the light-emitting epitaxial structure is positioned between the substrate and the optical mechanical supporting structure; and one side of the optical mechanical supporting structure is a light emergent surface. In the invention, the light-emitting epitaxial structure is clamped between the optical mechanical supporting structure and the heat radiation substrate with the conductive channel so that the heat radiation problem is effectively solved on the one hand and the physical stability and structural integrity of the light-emitting epitaxial structure are assured on the other hand; and the light-emitting epitaxial structure can be used as a light extraction surface to enhance the light emergent efficiency.

Description

technical field [0001] The present invention relates to a semiconductor light-emitting device and its manufacturing method, more specifically to a deep ultraviolet semiconductor light-emitting device and its manufacturing method, the light-emitting wavelength of which is 100nm-315nm. Background technique [0002] The UV coverage wavelength range is 100nm~400nm. Generally, the wavelength range of UVA refers to 400~315nm; the wavelength range of UVB refers to 315~280nm; the wavelength range of UVC refers to 280~100nm. Compared with fluorescent lighting and gas discharge lighting, the lighting method of LED can be more efficient. [0003] Ultraviolet light-emitting diodes can emit light in the ultraviolet range (from 100-400nm), but the actual luminous efficiency is very limited below the wavelength of 365nm. At 365nm wavelength, its luminous efficiency is 5~8%, and at 395nm wavelength, it is close to 20%. The luminous efficiency of ultraviolet rays in longer wavelength bands...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/64H01L33/20H01L33/46H01L33/00
CPCH01L33/0079H01L33/405H01L33/641H01L2933/0083H01L33/22H01L33/0093
Inventor 钟志白陈文欣梁兆煊
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com