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Resistive random access memory with self-rectifying effect

A technology of resistive memory and resistive layer, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of increasing the complexity of device manufacturing and the influence of device miniaturization advantages, and achieves low cost and high compatibility. , to avoid the effect of crosstalk

Inactive Publication Date: 2011-10-12
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Obviously, the first method increases the complexity of device manufacturing, and also affects the miniaturization advantages of the device

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiment 1. Fabrication of a resistive variable memory with a cross structure

[0022] (1) A layer of insulating silicon oxide is obtained by high-temperature thermal oxidation on the silicon substrate, and a layer of p-type silicon heavily doped with B is deposited on the silicon oxide layer by pulsed electron beams, wherein the doping concentration of B is 10 20 cm -3 .

[0023] (2) Clean the p-type silicon with acetone, alcohol, and deionized water in sequence, and then dry it.

[0024] (3) Coating photoresist on the p-type silicon obtained above, and then exposing, the exposure intensity is 2.6mW / cm 2 ; Exposure time is 10 seconds; developing, developing for 1 minute, fixing for 30 seconds; then using reactive ion etching silicon substrate, the etching conditions are: RF power 50W, air pressure is 5Pa, SF6 gas flow rate is 40SCCM, The etching time is 100 seconds; finally, the photoresist is stripped off to obtain a strip-shaped p-type silicon bottom electrode w...

Embodiment 2

[0030] Embodiment 2, the making of the resistive variable memory of cross structure

[0031](1) A layer of insulating silicon oxide is obtained by high-temperature thermal oxidation on the silicon substrate, and a layer of p-type silicon material heavily doped with Al is deposited on the silicon oxide layer by pulsed electron beam, wherein the doping concentration of Al is 10 20 cm -3 .

[0032] (2) Clean the p-type silicon with acetone, alcohol, and deionized water in sequence, and then dry it.

[0033] (3) Coating photoresist on the p-type silicon obtained above, and then exposing, the exposure intensity is 2.6mW / cm 2 ; Exposure time is 10 seconds; developing, developing for 1 minute, fixing for 30 seconds; then using reactive ion etching silicon substrate, the etching conditions are: RF power 50W, air pressure is 5Pa, SF6 gas flow rate is 40SCCM, The etching time is 100 seconds; finally, the photoresist is stripped off to obtain a strip-shaped p-type silicon bottom elect...

Embodiment 3

[0039] Embodiment 3, Fabrication of a resistive variable memory with a cross structure

[0040] (1) A layer of insulating silicon oxide is obtained by high-temperature thermal oxidation on the silicon substrate, and a layer of p-type silicon material heavily doped with Ga is deposited on the silicon oxide layer by pulsed electron beam, wherein the doping concentration of Ga is 10 20 cm -3 .

[0041] (2) Clean the p-type silicon with acetone, alcohol, and deionized water in sequence, and then dry it.

[0042] (3) Coating photoresist on the p-type silicon obtained above, and then exposing, the exposure intensity is 2.6mW / cm 2 ; Exposure time is 10 seconds; developing, developing for 1 minute, fixing for 30 seconds; then using reactive ion etching silicon substrate, the etching conditions are: RF power 50W, air pressure is 5Pa, SF6 gas flow rate is 40SCCM, The etching time is 100 seconds; finally, the photoresist is stripped off to obtain a strip-shaped p-type silicon bottom e...

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Abstract

The invention discloses a resistive random access memory which is composed of a bottom electrode, a resistive layer and an upper electrode, wherein the resistive layer is deposited on the bottom electrode; the upper electrode is deposited on the resistive layer; the bottom electrode is a bar-shaped p-shaped silicon electrode; the resistive layer is an n-shaped zinc oxide thin film; the upper electrode is a bar-shaped aluminum electrode or titanium electrode; and the bottom electrode and the upper electrode are vertical mutually. A low-resistance p-shaped silicon is selected for the bottom electrode of the resistive random access memory provided by the invention, the resistive random access memory is highly compatible with the traditional CMOS (complementary metal-oxide-semiconductor transistor) technology, can develop a nonvolatile memory with high density without changing the existing technology condition, and has the characteristics of low cost, and the like.

Description

technical field [0001] The invention relates to a resistive variable memory with self-rectification effect, relates to the field of memory and microelectronics, in particular to the field of non-volatile memory. Background technique [0002] In recent years, with the pursuit of high-density, high-speed, low-power non-volatile memory, the concept of resistive memory has attracted more and more attention, and has become one of the research focuses of the semiconductor industry. As a traditional non-volatile memory, flash memory has always had shortcomings such as low erasable life and high erasing voltage. Due to the limitations of its storage mechanism, it is increasingly difficult to further miniaturize flash memory to obtain high-density memory. It is precisely because of this bottleneck of flash memory that the research on new non-volatile memory has become more and more popular all over the world. [0003] Resistive memory is considered to be a new type of non-volatile ...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24
Inventor 潘峰陈超曾飞罗景庭唐光盛
Owner TSINGHUA UNIV
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