Construction method for controlling cleanliness of electronic-grade multicrystal-silicon process pipe

A technology for process pipelines and construction methods, applied in cleaning methods and utensils, chemical instruments and methods, circuits, etc., can solve the problems of difficult control of pipeline cleanliness and poor cleanliness control effect.

Active Publication Date: 2011-11-02
SCEGC EQUIP INSTALLATION GRP COMPANY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a construction method for controlling the cleanliness of electronic-grade polysilicon process pipelines in view of the deficiencies in the above-mentioned prior art. During the construction of polysilicon process pipelines, there are many factors that affect the internal cleanliness of the pipeline, the internal cleanliness of the pipeline is not easy to control, and the cleanliness control effect is poor, etc.

Method used

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  • Construction method for controlling cleanliness of electronic-grade multicrystal-silicon process pipe
  • Construction method for controlling cleanliness of electronic-grade multicrystal-silicon process pipe
  • Construction method for controlling cleanliness of electronic-grade multicrystal-silicon process pipe

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Embodiment 1

[0071] In this embodiment, the constructed polysilicon process pipeline is composed of multiple pipeline sections assembled, and two adjacent pipeline sections are connected by welding or through flanges; the pipeline section is an integral The pipeline segment may be assembled from multiple pipeline segments, and two adjacent pipeline segments in the pipeline segment are connected by welding or through flanges. like figure 1 As shown, the cleanliness control construction method of the polysilicon process pipeline comprises the following steps:

[0072] Step 1. Prefabrication processing: According to the pre-designed pipe section diagram and according to the conventional prefabrication method, assemble all the pipeline segments forming the polysilicon process pipeline, all the valves installed on the polysilicon process pipeline and the polysilicon process pipeline. All flanges required are prefabricated.

[0073] During the actual prefabrication process of all pipeline segm...

Embodiment 2

[0157] In this embodiment, the difference from Embodiment 1 is: when cutting the prefabricated parts of each pipeline segment in step 1, a machining allowance of 5 mm is reserved at the free end of the prefabricated parts of each pipeline segment; The angle of the V-shaped groove is 50°; in the internal gas protection device described in step 202, the lateral width of the exhaust cylinder is 20 cm, and when the welded joints are aligned for the two pipe segments to be welded , the gap between the welding port groups is 2.5mm; in step 204, after the argon gas is continuously introduced into step 203 for 4 minutes, the two welded pipe segments are welded by an argon arc welding machine; in step 2041, the tack welding process 4 solder joints are formed in , and the welding length of each solder joint is 5mm; Start welding after 20 mm from the starting welding position; in step 2043, seal welding is performed 5 minutes after the bottom welding described in step 2042; Introduce ar...

Embodiment 3

[0160] In this embodiment, the difference from Embodiment 1 is: when cutting the prefabricated parts of each pipeline segment in step 1, a machining allowance of 10 mm is reserved at the free end of the prefabricated parts of each pipeline segment; The angle of the V-shaped groove is 60°; in the internal gas protection device described in step 202, the lateral width of the exhaust cylinder is 50 cm, and the welded joints of the two pipe segments to be welded are aligned , the gap between the welding port groups is 3mm; in step 204, after the argon gas is continuously introduced into step 203 for 7 minutes, the two welded pipe segments are welded by an argon arc welding machine; in step 2041, during the tack welding process Form 3 welding spots, and the welding length of each welding spot is 10mm; in step 2042, after the positioning spot welding described in step 2041 is finished 6 minutes, carry out back welding, and when performing back welding, start from the scheduled time ...

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Abstract

The invention discloses a construction method for controlling the cleanliness of an electronic-grade multicrystal-silicon process pipe. The construction method comprises the following steps of: (1) prefabrication machining; (2) pipe section assembling: finishing an assembly procedure of pipe sections by utilizing an interior gas protection device and an argon arc welding machine; (3) pipe section cleaning comprising the following steps of: degrease cleaning, water flushing after degreasing, complexing and derusting, rinsing, ammonia-plugging flushing, passivation processing, ultra-pure water flushing, dry processing and packaging; (4) multicrystal-silicon process pipe assembling; (5) field assembling of the multicrystal-silicon process pipe; and (6) process pipe blowing, pressure testing and airtightness testing. The invention has the advantages of reasonable design, simplicity and convenience in operation, convenience for realizing and good pipe cleanliness control effect, can solve various problems such as complex factors influencing the cleanliness of the interior of the multicrystal-silicon process pipe, difficulty in control of the cleanliness of the interior of the pipe, poor control effect of the cleanliness and the like in a multicrystal-silicon process pipe construction process.

Description

technical field [0001] The invention belongs to the technical field of pipeline internal cleanliness control, and in particular relates to a construction method for controlling the cleanliness of electronic-grade polysilicon process pipelines. Background technique [0002] With the development and progress of society, human beings pay more and more attention to energy. As the cornerstone material of new energy, the demand for polysilicon, especially the demand for electronic grade polysilicon, is also increasing. Polysilicon is the main raw material for manufacturing polished silicon wafers, solar cells and high-purity silicon products, and is the most basic raw material for the information industry and new energy industry. As the most pure electronic grade polysilicon in polysilicon products (purity is 11 nines, that is, its purity is 99.999999999%), the production process is only mastered by a few developed countries in the world. The production process of electronic grad...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00B08B9/032
Inventor 吴常明张斌同春社秦文敏王卫东闫晓辉马彦谭克林
Owner SCEGC EQUIP INSTALLATION GRP COMPANY
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