Tail gas treatment device for high-temperature furnace
A tail gas treatment and high-temperature furnace technology, applied in the direction of incinerators, combustion methods, combustion types, etc., can solve problems such as blockage of tail gas combustion ports and drains, easy agglomeration of residues, and short maintenance and cleaning periods for tail gas treatment devices , to achieve the effect of saving maintenance costs, prolonging the shutdown maintenance cycle, and facilitating cleaning and maintenance
Active Publication Date: 2013-05-29
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0007] The technical problem to be solved by the present invention is to provide a high-temperature furnace tail gas treatment device to solve the problem that the residue in the existing high-temperature furnace tail gas treatment device is easy to agglomerate and block the tail gas combustion port and drain port, and the time period for the tail gas treatment device to be shut down for maintenance and cleaning is short The problem
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[0025] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0026] The high-temperature furnace exhaust gas treatment device described in the present invention can be widely used in various processes of silicon wafer manufacturing, and can be realized in various alternative ways. The following is an illustration through a preferred embodiment. Of course, the present invention is not limited In this specific embodiment, general substitutions known to those skilled in the art undoubtedly fall within the protection scope of the present invention.
[0027] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of illustration, the schematic diagrams are not partially enlarged according t...
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The invention provides a tail gas treatment device for a high-temperature furnace. The tail gas treatment device comprises a combustor and a residue crushing device, wherein the residue crushing device is a hollow grid frame; a bulged tip is formed at the intersection of grids; and the residue crushing device is arranged in the combustor. When the tail gas treatment device for the high-temperature furnace is used, tail gas residues can be crushed by the bulged tip on the residue crushing device when dropping out, and the tail gas residues are difficult to agglomerate, so the trouble that the tail gas treatment device is needed to be cleaned and maintained frequently by machine halt due to the blockage of massive dropped tail gas residues on a tail gas burner port and a water discharge port is avoided. By the tail gas treatment device for the high-temperature furnace, the every-time maintenance period can be prolonged from half a day to one month; therefore, the machine halt maintenance period of the tail gas treatment device is prolonged greatly, the maintenance cost is saved, and the time of normal running of equipment is prolonged.
Description
technical field [0001] The invention relates to the field of high-temperature furnace devices in semiconductor technology, in particular to a high-temperature furnace tail gas treatment device. Background technique [0002] Many processes in the manufacture of silicon wafers, such as thermal growth of oxides, thermal annealing of the surface of silicon wafers after ion implantation, deposited films, glass body reflow, and formation of silicide films, etc., all require the use of high-temperature furnace equipment. Because these processes are closely related to temperature, this makes high-temperature furnaces a very critical factor in IC manufacturing. [0003] A high-temperature furnace usually includes a process chamber, a wafer transfer system, a gas distribution system, an exhaust gas treatment device, and a temperature control system. The process chamber is a device for heating silicon wafers. The silicon wafer transmission system realizes the loading and unloading of ...
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IPC IPC(8): F23G5/44
Inventor 姜再培张希山陶永钧汪少军
Owner SEMICON MFG INT (SHANGHAI) CORP