Lighting dose real-time controlling apparatus in photolithography system

A real-time control and lithography system technology, applied in the semiconductor field, can solve problems such as difficulty in building models, difficulty in long-term guarantee of accuracy, inability to test all exposure conditions, etc., to achieve the effect of improving accuracy
CN102253602AInactive Publication Date: 2011-11-23SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
6 Cites 18 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
Publication Date
2011-11-23
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a lighting dose real-time controlling apparatus. The apparatus comprises orderly arranged components along an optical axis, which are: a light source, a lighting system, a mask bench, an object lens, and a workpiece bench. A first light energy detector and a second energy spot sensor are respectively arranged in the lighting system and on the workpiece bench. The apparatus is characterized in that: a third light energy detector is arranged in the light path between the first light energy detector and a second light energy spot sensor. The third light energy detector is used for measuring the lighting dose in real time during exposure. With the apparatus provided by the invention, light intensity between the first light energy detector and a second light energy spot sensor can be measured in real time during exposure, such that a yield is not influenced. The third light energy detector is arranged between the first light energy detector and a second light energy spot sensor, such that an influence of varied optics transmissivities between a first and a third light energy detectors is avoided. Therefore, a complicated transmissivity prediction model is not required. An accurate energy measured on a silicon surface can be obtained through simple reforming. Dose controlling can be carried out upon exposure fields according to the measuring results, such that dose accuracy can be improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a device and method for real-time measurement and precise control of illumination dose in a photolithography system. Background technique

[0002] Generally speaking, in the lithography machine system, there are two light energy sensors related to dose control. One is on the workpiece table, which is called Energy Spot Sensor (ESS for short), which is used to measure the visual field during non-exposure. Field profile and dose, one inside the lighting system, called Energy Detector, ED for short. Generally, the energy difference between laser pulses is relatively large, so the energy sensor ED is used to measure the beam energy in real time, and then perform real-time feedback control on the dose based on the measured value, such as figure 1 shown.

[0003] The method of using the energy sensor ED for feedback control of the dose is to use the energy sensor ED to measure...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More