Insulating member, metal base substrate, and semiconductor module, and manufacturing methods thereof

Abstract

The present invention provides an insulating member with good radiation performance and breakdown strength, a metal base substrate using the same and a manufacture method thereof. The insulating member of the invention can include an epoxy resin, a first inorganic filler diffused in the epoxy resin and having an average particle diameter of 1 to 99 nm, and a second inorganic filler diffused in the epoxy resin and having an average particle diameter of 0.1 to 100 [mu]m. The first and second inorganic fillers can be independent of each other, and can be selected from a group including Al2O3, SiO2, BN, AIN, and Si3N4, and the blending ratios of the first and second inorganic fillers in the insulating member can be 0.1 to 7% by weight and 80 to 95% by weight respectively. A metal base substrate can be formed by forming a metal foil and a metal base on either surface of the insulating member.

Description

technical field [0001] The present invention relates to an insulating member, a metal base substrate, a semiconductor module, and a manufacturing method thereof. Background technique [0002] Semiconductor modules for powering equipment are used in a wide range of applications, from consumer equipment such as home air conditioners and refrigerators to industrial equipment such as inverters and servo controllers. From the viewpoint of power consumption, a semiconductor module is mounted on a wiring substrate such as a metal base substrate or a ceramic substrate. One or more circuit elements such as power semiconductor elements are mounted on a wiring substrate, a plastic case frame is fixed, and a semiconductor module is produced by sealing with silicone, epoxy, or the like. [0003] Also, in order to reduce manufacturing costs, a fully molded semiconductor module using a transfer molding method has been developed (refer to JP-A-9-139461, paragraph 0038, figure 1 and Figure...

AI Technical Summary

Problems solved by technology

However, since the metal base substrate 60 needs to be manufactured separately, there is a problem of increased material cost.

[0008] Also, in the insulating layer 61 of the metal base substrate 60, thermal conduction is made by filling an epoxy resin with an inorganic filler (for example, silicon oxide, aluminum oxide, silicon nitride, aluminum nitride, or boron nitride). The rate increases, but since the breakdown voltage decreases with the increase of the filling amount, the thermal conductivity of 3-4W / m·K is the limit and there is a limit to the cooling performance

[0009] Although a ceramic substrate that is a sintered body of alumina, silicon nitride, aluminum nitride, etc. can be used for a wiring substrate to increase thermal conductivity, there is a problem that a ceramic substrate has a higher cost than a metal base substrate

Images