A kind of semiconductor device and its forming method

Abstract

The invention provides a forming method of a semiconductor device. The method is characterized in that a step of forming source / drain regions comprises the following substeps: determining a junction region and forming an auxiliary layer; with the auxiliary layer, a gate stack structure and isolation regions as masks, removing partial thickness of a semiconductor substrate in an active region to form a groove; and generating semiconductor materials in the groove to fill the groove, wherein the auxiliary layer covers the junction region; and the junction region comprises partial width of activeregion connected with the isolation regions. The invention also provides the semiconductor device. The semiconductor device is characterized in that semiconductor substrate materials are sandwiched between the source / drain regions and the isolation regions. The semiconductor device and the method are beneficial to leakage reduction.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device and a forming method thereof. Background technique [0002] Currently, methods for forming semiconductor devices include: first, as figure 1 and figure 2 As shown, an active region 20 and an isolation region 12 surrounding the active region 20 are formed on a semiconductor substrate 10; subsequently, as image 3 and Figure 4 As shown, a gate stack structure is formed (the gate stack structure includes a gate dielectric layer 22, a gate 24 formed on the gate dielectric layer 22 and sidewalls 26 surrounding the gate dielectric layer 22 and the gate 24 , in practice, a capping layer is also formed on the gate, and the capping layer is usually silicon nitride, which can prevent the gate from being damaged during operation. For the convenience of description, the text and drawings in this document , the capping layer is no longer marked), th...

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Problems solved by technology

[0003] However, if Figure 7 to Figure 9 As shown, it is found in practice that a gap 34 is formed at the junction of the source-drain region 32 and the isolation region 12; then, as Figure 10 to Figure 12 As shown, when the contact region 36 (such as a metal silicide layer) is subsequently formed on the source and drain regions 32, the contact region 36 can easily pass through the gap 34 to reach the junction region, thereby causing leakage

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