Multi-resistance-state resistance random access memory and method for implementing multiple resistance states utilizing same

A resistive memory, memory technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of insufficient research on multi-value memory applications, low power consumption and process compatibility, and improve storage density and compatibility. Good, simple craftsmanship
CN102306706AInactive Publication Date: 2012-01-04PEKING UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
PEKING UNIV
Publication Date
2012-01-04
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention relates to the technical field of semiconductor manufacturing, and discloses a multi-resistance-state resistance random access memory. The memory comprises a top electrode, a resistance change layer and a bottom electrode from top to bottom, wherein the resistance change layer is an oxide. The invention also provides a method for implementing multiple resistance states by utilizing the memory. The multi-resistance-state resistance random access memory provided by the invention is a device in an MIM (metal-insulator-metal) structure based on a SiO2 material. Under an appropriate operation method, the device can generate multi-stage resistance states, multi-bit memory can be realized in a unit, and the memory density of the memory can be improved; and the material based on SiO2 is adopted for the resistance change layer of the multi-resistance-state resistance random access memory, the memory and the method provided by the invention have the advantages of simple technology and good processing compatibility with the CMOS (complementary metal-oxide-semiconductor transistor) technology.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a multi-resistance resistive variable memory and a method for realizing multi-resistance using the same. Background technique

[0002] Traditional memories use binary to complete information storage, which is commonly referred to as 0 and 1. With the development of the integrated circuit industry, the market has higher and higher performance requirements for memories - low power consumption, high speed, Easy integration and multi-value storage, etc. In multi-value storage, each node is required to generate multiple (for example, four) stable states (multiple resistance states in resistive memory), so as to correspond to different storage values ​​one-to-one. The application of multi-value storage technology can Improving storage density and increasing storage capacity will greatly promote the development of memory.

[0003] Resistive variable memory is a new...

Claims

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