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Multi-resistance-state resistance random access memory and method for implementing multiple resistance states utilizing same

A resistive memory, memory technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of insufficient research on multi-value memory applications, low power consumption and process compatibility, and improve storage density and compatibility. Good, simple craftsmanship

Inactive Publication Date: 2012-01-04
PEKING UNIV
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Problems solved by technology

[0005] Based on SiO 2 The resistive memory has shown good bipolar resistive characteristics, has the advantages of low power consumption and good process compatibility, but its application in multi-valued memory has not been fully studied

Method used

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  • Multi-resistance-state resistance random access memory and method for implementing multiple resistance states utilizing same
  • Multi-resistance-state resistance random access memory and method for implementing multiple resistance states utilizing same
  • Multi-resistance-state resistance random access memory and method for implementing multiple resistance states utilizing same

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Embodiment Construction

[0026] A multi-resistance RRAM (also referred to as a multi-level RRAM) proposed by the present invention will be described in detail below with reference to the drawings and embodiments.

[0027] The multi-resistance resistive variable memory of the present invention is a MIM structure (MIM refers to a sandwich structure composed of metal, insulator, and metal three-layer film), including a top electrode (TE), a resistive variable layer (for oxide) and a bottom electrode ( BE). The metals of the top and bottom electrodes are prepared by sputtering, evaporation or MOCVD (metal organic compound chemical vapor deposition), SiO 2 Prepared by plasma-enhanced chemical vapor deposition. Such as figure 1 As shown, the embodiment of the present invention is Ag / SiO 2 / Pt / Ti / SiO 2 A multi-level resistance resistive memory device with / Si structure. Utilizing the bipolar resistance switching characteristics of the device, the resistance switching memory can generate four resistance ...

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Abstract

The invention relates to the technical field of semiconductor manufacturing, and discloses a multi-resistance-state resistance random access memory. The memory comprises a top electrode, a resistance change layer and a bottom electrode from top to bottom, wherein the resistance change layer is an oxide. The invention also provides a method for implementing multiple resistance states by utilizing the memory. The multi-resistance-state resistance random access memory provided by the invention is a device in an MIM (metal-insulator-metal) structure based on a SiO2 material. Under an appropriate operation method, the device can generate multi-stage resistance states, multi-bit memory can be realized in a unit, and the memory density of the memory can be improved; and the material based on SiO2 is adopted for the resistance change layer of the multi-resistance-state resistance random access memory, the memory and the method provided by the invention have the advantages of simple technology and good processing compatibility with the CMOS (complementary metal-oxide-semiconductor transistor) technology.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a multi-resistance resistive variable memory and a method for realizing multi-resistance using the same. Background technique [0002] Traditional memories use binary to complete information storage, which is commonly referred to as 0 and 1. With the development of the integrated circuit industry, the market has higher and higher performance requirements for memories - low power consumption, high speed, Easy integration and multi-value storage, etc. In multi-value storage, each node is required to generate multiple (for example, four) stable states (multiple resistance states in resistive memory), so as to correspond to different storage values ​​one-to-one. The application of multi-value storage technology can Improving storage density and increasing storage capacity will greatly promote the development of memory. [0003] Resistive variable memory is a new...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24G11C13/00
Inventor 刘力锋于迪高滨陈冰张飞飞康晋锋
Owner PEKING UNIV
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