Silicon based substrate and fabrication method thereof

Abstract

The invention discloses a silicon based substrate, which comprises a silicon chip, a first line substrate and a second line substrate. The silicon chip is provided with a first surface and a second surface which face to each other and is provided with a through-silicon via. The first line substrate is arranged on the first surface and consists of a plurality of first dielectric layers and a plurality of first conductive line layers which are alternately laminated. The second line substrate is arranged on the second surface and consists of a plurality of second dielectric layers and a plurality of second conductive line layers which are alternately laminated. The through-silicon via is respectively and electrically connected with the first conductive line layer at the bottommost layer in the first line substrate and the second conductive line layer at the topmost layer in the second line substrate. The wiring density of the first conductive line layers is larger than the wiring density of the second conductive line layers, or the first dielectric layers comprise organic materials and the second dielectric layers comprise organic materials. The invention additionally discloses a fabrication method for the silicon based substrate.

Description

technical field [0001] The invention relates to a silicon-based substrate, and in particular to a silicon-based substrate with an asymmetric structure and a manufacturing method thereof. Background technique [0002] At present, the existing silicon based substrate is usually designed and manufactured according to the symmetrical design rule of the traditional circuit substrate, so it has a symmetrical structure. That is to say, the stacked circuit structure and the material of the dielectric layer on opposite sides of the silicon substrate of the conventional silicon-based substrate are substantially the same. [0003] Generally, in the actual use of silicon-based substrates in electronic products, the stacked circuit structure on one side of the silicon substrate is used for electrical connection with electronic components, and the stacked circuit structure on the other side is used for electrical connection with circuit boards during packaging. With the increasingly dive...

AI Technical Summary

Problems solved by technology

However, in fact, the silicon substrate is used for packaging and the stacked circuit structure electrically connected to the circuit board does not require such a high wiring density. Therefore, it is easy to cause waste of resources and increase production costs.

In addition, in actual production, another aspect of the silicon-based substrate is the stacked circuit structure that is electrically connected to the circuit board during packaging. Fabrication of Wiring Density

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