Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-voltage LED (Light Emitting Diode) device and manufacturing method thereof

A technology of LED devices and manufacturing methods, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., and can solve the problems of current density crowding, power chip heat dissipation, etc.

Inactive Publication Date: 2012-02-01
ENRAYTEK OPTOELECTRONICS
View PDF9 Cites 45 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a manufacturing method for high-voltage LED devices to solve the local crowding effect of current density and the heat dissipation of power chips

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-voltage LED (Light Emitting Diode) device and manufacturing method thereof
  • High-voltage LED (Light Emitting Diode) device and manufacturing method thereof
  • High-voltage LED (Light Emitting Diode) device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0016] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar extensions without violating the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0017] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged accordi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a manufacturing method of a high-voltage LED (Light Emitting Diode) device, which comprises the following steps of: providing a substrate, and sequentially forming an N-type limit layer, an epitaxial layer and a reflecting layer on the substrate; manufacturing at least one isolation trench on the substrate so as to isolate at least two regions on the substrate, and manufacturing a plurality of uniformly-distributed N-type through holes in each region; depositing insulation layers on the inner surfaces, except for bottoms, of the N-type through holes and the isolation trench and the surface of a part of reflection layer; depositing metal to form conductive bolts in the N-type through holes, forming a positive electrode conductive bump on the exposed partial reflection layer, and forming negative electrode conductive bumps which are connected with the conductive bolts in the single region, so as to form LED modules; and packaging one or more LED module(s) and a functional chip to form a high-voltage LED device. The invention also provides the high-voltage LED device, and the problems of current density local crowding effect and heat dissipation of a power-typechip are solved.

Description

technical field [0001] The invention belongs to the field of light-emitting device manufacturing, and in particular relates to a high-voltage LED device and a manufacturing method thereof. Background technique [0002] With the development of nitride-based high-brightness light-emitting diode (Light Emitting Diode, LED) application development, a new generation of green and environmentally friendly solid-state lighting source nitride LED has become the focus of research, especially the third-generation semiconductor gallium nitride ( GaN) represented by the development of blue LED. Group III nitride semiconductor materials based on gallium nitride (GaN), indium gallium nitride (InGaN) and aluminum gallium nitride (AlGaN) alloys have wide direct band gaps, high internal and external quantum efficiencies, high thermal conductivity, and High temperature, corrosion resistance, shock resistance, high strength and high hardness are ideal materials for manufacturing high-brightnes...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L27/15H01L33/36H01L33/62
Inventor 肖德元张汝京
Owner ENRAYTEK OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com