Unlock instant, AI-driven research and patent intelligence for your innovation.

A method of manufacturing embedded flash memory

A manufacturing method and embedded technology, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of difficulty in removing the silicon nitride layer, and achieve the effect of saving steps and improving efficiency

Active Publication Date: 2016-10-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a manufacturing method of embedded flash memory to solve the problem that the residual active polysilicon makes the silicon nitride layer difficult to remove

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method of manufacturing embedded flash memory
  • A method of manufacturing embedded flash memory
  • A method of manufacturing embedded flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] A method for manufacturing an embedded flash memory proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0017] The core idea of ​​the present invention is that, in the manufacturing method of the embedded flash memory provided, the first silicon nitride layer is reserved after the shallow trench isolation is formed, and the defects caused by the height difference between the shallow trench isolation and the floating gate polysilicon layer are eliminated. The formed second silicon nitride layer has shallow grooves, thereby avoiding the drawback th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for manufacturing an embedded flash memory, comprising: dividing a semiconductor substrate into a flash memory area and a logic area, and sequentially forming a silicon dioxide layer, a floating gate polysilicon layer and a first silicon nitride layer on the semiconductor substrate , respectively forming shallow trenches in the logic area and the flash memory area; filling insulators in the shallow trenches to form shallow trench isolation; forming a second silicon nitride layer on the first silicon nitride layer and the shallow trench isolation ; forming a groove in the flash memory area; depositing an active polysilicon layer on the second silicon nitride layer to form a source in the groove; using chemical mechanical polishing to planarize the active polysilicon layer; using wet etching removing the first silicon nitride layer and the second silicon nitride layer; removing the floating gate polysilicon layer in the logic area, forming a CMOS structure in the logic area, and forming word lines in the flash memory area. The manufacturing method of the embedded flash memory provided by the invention saves the steps of the process and improves the efficiency of removing the second silicon nitride layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing an embedded flash memory. Background technique [0002] Memory is used to store a large amount of digital information. According to recent surveys, memory chips account for about 30% of semiconductor transactions worldwide. Over the years, technological progress and market demand have led to more and more high-density various Type memory, such as RAM (random access memory), DRAM (dynamic random access memory) and FRAM (ferroelectric memory), etc., among them, flash memory is FLASH and has become the mainstream of non-volatile semiconductor storage technology, in a variety of FLASH Among devices, embedded flash memory is a kind of system on chip (SOC), which integrates logic circuit modules and flash memory circuit modules in an integrated circuit at the same time, and is widely used in smart cards, microcontrollers and other products...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8247H01L21/762
Inventor 王哲献高超胡勇于涛江红李冰寒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More