A method of manufacturing embedded flash memory
A manufacturing method and embedded technology, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of difficulty in removing the silicon nitride layer, and achieve the effect of saving steps and improving efficiency
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[0016] A method for manufacturing an embedded flash memory proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.
[0017] The core idea of the present invention is that, in the manufacturing method of the embedded flash memory provided, the first silicon nitride layer is reserved after the shallow trench isolation is formed, and the defects caused by the height difference between the shallow trench isolation and the floating gate polysilicon layer are eliminated. The formed second silicon nitride layer has shallow grooves, thereby avoiding the drawback th...
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