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200W 30dB attenuation sheet of aluminum nitride ceramic substrate

A technology of aluminum nitride ceramics and aluminum nitride substrates, which is applied in the direction of electrical components, circuits, waveguide devices, etc., can solve the problems that the power has a great influence, does not meet environmental protection, and there is no production of aluminum nitride 30dB attenuators. Achieve the effect of increasing the resistance area and increasing the impact resistance of high and low temperature

Inactive Publication Date: 2012-02-22
苏州市新诚氏通讯电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is conceivable that after the material structure is determined, the power capacity of the attenuator is determined. If the attenuator is allowed to withstand more than the design limit value, the attenuator will be burned, so the selection of materials and the design of the circuit structure, as well as the size The size and production process have a great influence on the power. The market has higher and higher requirements for environmental protection and size miniaturization. The previous use of beryllium oxide as the substrate material does not meet the requirements of environmental protection.
[0003] At present, there are few enterprises in China that can produce 30dB aluminum nitride substrate attenuators, some of which are above 100W, and there is almost no production of aluminum nitride 30dB attenuators above 100W.

Method used

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  • 200W 30dB attenuation sheet of aluminum nitride ceramic substrate
  • 200W 30dB attenuation sheet of aluminum nitride ceramic substrate

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Embodiment Construction

[0011] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0012] Such as figure 1 As shown, the high-power aluminum nitride ceramic substrate 200W 30dB attenuator includes a 9.55*9.55*1MM aluminum nitride substrate 1, the back of the aluminum nitride substrate 1 is printed with a back guide layer, and the front of the aluminum nitride substrate 1 Wires 2 and resistors R1, R2, R3 are printed. The resistors R1, R2, R3 are connected by wires to form an attenuation circuit. The attenuation circuit is electrically connected to the back conductive layer through silver paste, so that the attenuation circuit is grounded. The input end of the attenuation circuit is connected to a pad 5 , and the output end is connected to a pad 6 . A protective glass film 3 is printed on the resistors R1, R2, R3, and a black protective film 4 is printed on the upper surface of the conductive wire 2 and the protective glass ...

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Abstract

The invention discloses a 200W 30dB attenuation sheet of a high-power aluminum nitride ceramic substrate, which comprises an aluminum nitride substrate with the specification of 9.55mmX9.55mmX1mm. A back guide layer is printed on the back of the aluminum nitride substrate, leads and resistors are printed on the front side of the aluminum nitride substrate, and the leads are connected with the resistors to form an attenuating circuit. The area of each resistor is increased by the aid of the attenuation sheet, so that the high temperature and low temperature resistance and impact resistance thereof are enhanced, quenching to the resistors caused by the high temperature is avoided when the leads are welded at an output end, and risk of failure of the resistors during actual use caused by quenching of the resistors is reduced simultaneously. By the aid of the optimized design of the circuit, the performance of the attenuation sheet is improved, required attenuation values can be obtained by accurately controlling the surface resistivity to control the resistance value of each resistor, and the gap in domestic production of 200W 30dB attenuation sheets of aluminum nitride substrates is filled.

Description

technical field [0001] The invention relates to an aluminum nitride ceramic attenuation sheet, in particular to a 200-watt 30dB attenuation sheet with an aluminum nitride ceramic substrate. Background technique [0002] The attenuator is to attenuate the large voltage signal to a certain proportional multiple (generally referred to as power attenuation) according to the actual requirements to achieve a safe or ideal level value, which is convenient for testing, especially widely used in radio frequency and microwave. At present, most communication base stations are The high-power ceramic load chip is used to absorb the reverse input power in the communication components. The high-power ceramic load chip can only simply consume and absorb excess power, but cannot monitor the working status of the base station in real time. When the base station fails, It is impossible to make a judgment in time and has no protective effect on the equipment. The attenuator can not only absorb...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/22
Inventor 郝敏
Owner 苏州市新诚氏通讯电子股份有限公司
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