Polymeric barrier removal polishing slurry

A technology of slurry and water-based slurry, which is applied in the direction of grinding/polishing equipment, surface polishing machine tools, polishing compositions containing abrasives, etc., and can solve problems such as no barrier removal rate

Inactive Publication Date: 2012-03-07
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, these slurries do not have sufficient barrier removal in some applications

Method used

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  • Polymeric barrier removal polishing slurry
  • Polymeric barrier removal polishing slurry
  • Polymeric barrier removal polishing slurry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The first set of slurries were characterized by varying BTA, poly(methyl vinyl ether), potassium phosphate and GABA. The polishing data are shown in Table 2 below.

[0048] Table 2

[0049]

[0050]

[0051] CDO is equal to the construction of Novellus' Coral; "high" in the table represents the desired minimum tantalum removal rate.

[0052] The above data indicated that varying the concentrations of BTA, poly(methyl vinyl ether), potassium phosphate and GABA had no significant effect on the removal rates of TEOS, CDO and copper. refer to figure 1 with 2 , figure 2 Indicates that the removal rate stability remains consistent with GABA.

Embodiment 2

[0054] The second set of slurries determined polishing characteristics by varying BTA, polymethylvinyl ether, potassium phosphate and GABA. The polishing data are shown in Table 3 below.

[0055] table 3

[0056]

[0057] CDO is equivalent to Coral purchased from Novellus; "High" in the table represents a desired tantalum removal rate of at least

[0058] The above data indicated that varying the concentrations of BTA, poly(methyl vinyl ether), potassium phosphate and GABA had no significant effect on the removal rates of TEOS, CDO and copper.

[0059] Table 2

Embodiment 3

[0061] The third set of slurries determined polishing characteristics for copper and carbon-doped oxides by varying BTA, poly(methyl vinyl ether), potassium phosphate, and GABA, including carbon-doped oxides for patterned wafers. thing. Polishing data are shown in Table 4 below.

[0062] Table 4

[0063]

[0064] CDO is equivalent to Coral available from Novellus; CDO patterned wafer is equivalent to Black Diamond from Applied Materials. "High" in the table represents a desired tantalum removal rate of at least

[0065] The above data show that changing the concentration of BTA, poly(methyl vinyl ether), potassium phosphate and GABA has no significant effect on the removal rate of CDO and copper. Furthermore, the above data demonstrate that varying the concentration of BTA, poly(methyl vinyl ether), potassium phosphate and GABA has no significant effect on the removal rate of CDO on patterned wafers.

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Abstract

The invention provides a aqueous slurry useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry comprises by weight percent, 0 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0.001 to 5 poly(methyl vinyl ether) having a formula as follows: and the poly(methyl vinyl ether) is water soluble and n has a value of at least 5, 0.005 to 1 aminobutyric acid, 0.01 to 5 phosphorus-containing compound, 0 to 10 copper complexing agent formed during polishing and balance water.

Description

Background of the invention [0001] When ultra-large-scale integration (ULSI) technology is migrated to smaller line widths, it brings new challenges to the integration of traditional chemical-mechanical polishing (CMP) processes. In addition, the introduction of low-k and ultra-low-k dielectric films requires the use of more gentle CMP processes due to the low mechanical strength of the films and weak interfacial bonding with adjacent layers. In addition, ever-tightening defect specifications place additional demands on polishing slurries for low-k films. [0002] The integration of various low-k films with USLI will also require various additional steps and such as supercritical cleaning, dielectric and metal caps (caps), barriers and conformal deposition of copper, with low downward force Integration of new technologies such as chemical mechanical planarization and abrasive-free slurries. In addition to these technical options, ULSI fabricators must consider and address pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02B24B29/02
CPCC09G1/02C09K3/1463H01L21/3212H01L21/7684C09K3/14H01L21/304
Inventor 卞锦儒
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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