Device and method for depositing CIGS absorbed layer
A copper indium gallium selenide and absorbing layer technology, applied in the field of solar photovoltaics, can solve the problems of incomplete mixing and difficulty in mass production, and achieve the effect of incomplete mixing and difficulty in mass production
Active Publication Date: 2014-08-06
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
[0005] According to the present invention, through the use of single-layer reaction and flexible substrate, the problems of incomplete mixing and difficulty in mass production can be solved
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[0067] The flexible solar cell coating device of the present invention will be fully understood by the description of the following examples, so that those skilled in the art can complete it accordingly, but the implementation of the application is not limited to its implementation form by the following examples Those skilled in the art can still deduce other embodiments according to the spirit of the disclosed embodiments, and these embodiments should all belong to the scope of the present invention.
[0068] refer to figure 1, which is a schematic diagram showing the structure of a known CIGS battery 100 . A known CIGS battery 100 has a substrate 102 and a plurality of thin layers are deposited on the surface of the substrate 102 . Suitable substrate materials may include glass, aluminum, stainless steel, polymers, or any similarly flexible metals and plastics. An alkali-silicate layer (Alkali-silicate layer) 104 is deposited on the substrate 102 . In general, sodium from...
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Abstract
The present invention relates to a device and a method for depositing a CIGS absorbed layer, specifically relates to a device and a method for depositing the CIGS absorbed layer and the buffering layer represented by the following formula Cu (In, Ga)Se2 on a flexible substrate. By rotating the flexible substrate, the deposition of the CIGS absorbed layer can happen in a monolayer atomic reaction. A reel of flexible substrate is placed on a loading roller inside a flexible solar energy cell plating device. One segment of the substrate is spread and propelled along the roller. When the segment is rotated and heated, the deposition of the CIGS layer is realized. The deposition process comprises sputtering coating and vapor deposition and can continuously last until the plating layer reaches the preset depth and the substrate is completely plated. Then the buffering layer is coated on the CIGS layer in a sputtering way. Selenium element and sodium-permeating indium are utilized in the CIGS deposition. The selenium element can be ionized to increase the reactivity of the monolayer atomic reaction, and the buffering layer is a non-toxic ZnS-O layer.
Description
technical field [0001] The invention relates to the field of solar photovoltaics, in particular to a flexible solar cell coating device and a method for manufacturing a flexible copper indium gallium selenide (CIGS) absorbing layer cell. Background technique [0002] Due to the advancement of technology, including the improvement of conversion efficiency and the reduction of manufacturing costs, the development of thin-film solar photovoltaics has attracted attention. Copper Indium Gallium Selenide (CIGS) is a known absorber layer used in thin film solar cells. Copper indium gallium selenide (CIGS) thin film solar cells have achieved excellent conversion efficiencies (>19.5%) in laboratory environments. [0003] Today, most CIGS deposition is achieved by two techniques: co-evaporation or selenization. Co-evaporation involves simultaneously evaporating copper, indium, gallium, and selenium. Controlling the formation of integral compounds on large substrates is difficult...
Claims
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IPC IPC(8): C23C14/00C23C14/22C23C14/56C23C14/06C23C14/08H01L31/18H01L31/04
CPCY02E10/50Y02P70/50
Inventor 邓凤山
Owner TAIWAN SEMICON MFG CO LTD