CMOS (complementary metal oxide semiconductor) device capable of reducing charge collection generated by radiation and preparation method thereof

Abstract

The invention discloses a CMOS (complementary metal oxide semiconductor) device capable of reducing charge collection generated by radiation and a preparation method thereof. The CMOS device provided by the invention is provided with a heavily doped charge restriction collecting region vertically below a source region and a drain region, the doping type of the charge restriction collecting region is opposite to those of the source region and the drain region, and the doping concentration is greater than or equal to those of the source region and the drain source. The transverse range of the charge restriction collecting region is slightly less than or equal to those of the source region and the drain region, and the transverse position of a channel is not more than the edges of the source region and the drain region. The CMOS device provided by the invention can greatly decrease the 'hopper' range generated under the action of independent particles so that the instantaneously collected charge can be decreased under the action of the electric field. As the width of a depletion layer is narrowed, an electron hole in the 'hopper' range is more difficult to diffuse to the edge of the depletion layer, thus the charge collected by a sensitive node can be greatly reduced and the influence of the transient independent particles on the integrated circuit can be effectively restrained.

Description

technical field [0001] The invention relates to a CMOS device, in particular to a CMOS device which reduces charge collection caused by radiation and a preparation method thereof. Background technique [0002] With the development of science and technology, more and more electronic systems need to be applied in various radiation environments, such as space radiation environment, nuclear radiation environment, simulated source environment and ground radiation environment. Various radiation effects can cause the failure of the performance of integrated circuits, and the single event effect has become the most important threat to the failure of thin gate oxide devices. The single event effect refers to that when high-energy charged particles in the radiation environment pass through the sensitive area of ​​integrated circuit components, a large number of electron-hole pairs deposited in the track are collected under the electric field of the depletion layer of the semiconductor...

AI Technical Summary

Problems solved by technology

If a single event transient occurs at the output stage of a circuit, it will cause an error in the output; if it occurs in a memory element, it will cause the storage content to flip; even in a logic circuit, a single event will propagate along the logic circuit and during the propagation process The broadening effect appears in the medium, aggravating the probability of single event causing integrated circuit failure

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