Thin-film transistor, array substrate and device and preparation method

Abstract

The invention discloses a thin-film transistor, an array substrate, a device and a preparation method. The thin-film transistor comprises a conductive metal layer, wherein an insulating oxide layer is formed on the surface of the metal layer. The insulating oxide layer is formed by oxidizing treatment on the surface of the metal layer, and the oxide layer can function like a silicon nitride barrier layer of the thin-film transistor to substitute silicon nitride. The equipment required for preparing the oxide layer is not expensive and no extra materials are needed, so that the device and material costs are reduced as compared with the process of preparing the silicon nitride barrier layer. Besides, the oxide layer exists only on the surface of the metal layer, so as to reduce light barrier and reduce the requirement for light permeability, as a result, the process control is relatively simple and the cost can be further reduced.

Description

technical field [0001] The invention relates to the field of liquid crystal display, and more specifically, relates to a thin film transistor, an array substrate and a device, and a preparation method. Background technique [0002] A liquid crystal display device includes an array substrate with a thin film transistor and a color filter plate with a common electrode. The current array substrate is generally prepared by a conventional four-pass or five-pass photomask process. To etch the corresponding pattern in the corresponding film layer, it is necessary to repeatedly deposit multi-layer films in multiple chambers of physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD) respectively, and then perform corresponding etching on each layer ; The technology currently adopted has several obvious deficiencies: [0003] 1. The process is complicated: After the metal layer is prepared, a non-metal layer needs to be prepared to prevent the short circ...

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Problems solved by technology

[0003] 1. The process is complicated: After the metal layer is prepared, a non-metal layer needs to be prepared to prevent the short circuit between the metals and protect the metal layer. The preparation of the non-metal barrier layer requires machine and material costs; since the non-metal layer is covered as a whole, It has high requirements for light penetration, so it also puts forward high requirements for process control;

[0004] 2. High investment in equipment: Each layer of film needs to be formed separately, and PVD and PECVD require multiple chambers, which increases equipment investment;

[0005] 3. Heavy metal pollution: currently widely used Mo metal is a heavy metal, which has a great impact on the environment

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