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One-dimensional metal grating for terahertz quantum well detector and design method thereof

A technology of metal grating and design method, which is applied in the direction of diffraction grating, semiconductor device, sustainable manufacturing/processing, etc.

Inactive Publication Date: 2012-03-21
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a one-dimensional metal grating for terahertz quantum well detector and its design method

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  • One-dimensional metal grating for terahertz quantum well detector and design method thereof
  • One-dimensional metal grating for terahertz quantum well detector and design method thereof
  • One-dimensional metal grating for terahertz quantum well detector and design method thereof

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Embodiment Construction

[0026] The specific implementation manner of the present invention will be further described below by taking an actual THzQWP device as an example in conjunction with the accompanying drawings.

[0027] THzQWP part number: TQWPA.

[0028] Peak response frequency of TQWPA: ~3.0THz.

[0029] The first step is to design the grating period:

[0030] Infrared Fourier change spectrometer was used to measure the incidence of 45 degree angle end face ( figure 2 ) under the TQWPA photocurrent spectrum, the response area is about 1.0-5.0THz, and the response peak is about 3.0THz.

[0031] According to the usual one-dimensional metal grating design method, according to the grating equation

[0032] mλ=nd(sinα+sinβ)

[0033] Where m is the diffraction order, λ is the incident wavelength, n is the dielectric function of the medium, d is the grating period, α and β are the incident angle and diffraction angle, respectively.

[0034] In order to ensure that there are at least 1 order (...

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Abstract

The invention discloses a one-dimensional metal grating for a terahertz quantum well detector and a design method thereof. Period d of the one-dimensional metal grating is equal to wavelength lambda peak of peak response frequency corresponding to the terahertz quantum well detector in a device material of the terahertz quantum well detector. The design method of the terahertz quantum well detector comprises the following steps of: 1) measuring a photocurrent spectrum of a device under the condition of end face incidence at an angle of 45 degrees, determining response peak of the device, determining cut-off frequency of the grating according to the peak response frequency of the device, and further designing the period of the grating; 2) selecting a proper grating material; and 3) designing a proper grating thickness. By adopting the method, an intrinsic response region and the response peak of the device can be measured through measurement of an infrared fourier transform spectrometer, and the wavelength lambda peak of the peak response frequency in the device material is calculated, so that the period d of the grating is designed to be equal to lambda peak. The one-dimensional metal grating has great significance to implementation of the high-performance terahertz quantum well detector and imaging application thereof.

Description

technical field [0001] The invention relates to an optical coupler and a design method thereof, in particular to a one-dimensional metal grating used for a terahertz quantum well detector and a design method thereof. The invention belongs to the application technical field of semiconductor photoelectric devices. Background technique [0002] Terahertz (THz) wave refers to the frequency in the electromagnetic spectrum from 100GHz to 30THz (1THz=10 12 Hz), the corresponding wavelength is from 3 millimeters to 10 micrometers, which is the region of the electromagnetic spectrum between millimeter waves and infrared light. Due to its high application value in national defense security, anti-terrorism, medical imaging, material identification and environmental monitoring, THz technology has gradually attracted more and more attention. [0003] THz quantum well detector (THzQWP) is a semiconductor photodetector based on GaAs / AlGaAs multi-quantum well material system. The inter-s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0232G02B5/18H01L31/18
CPCY02P70/50
Inventor 曹俊诚张戎郭旭光
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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