Method for realizing pattern with line width of 0.18[mu]m by double photoetching method for I line photoetching machine

Abstract

The invention relates to a method for realizing a pattern with a line width of 0.18[mu]m by a double photoetching method for an I line photoetching machine, which comprises the following steps of: a, carrying out photoetching at first time, namely, coating a photoresist, using the I line photoetching machine for photoetching of the photoresist; b, carrying out corrosion treatment at first time, namely, corroding to remove polycrystalline silicon on a substrate; c, carrying out photoetching at second time for registration, namely, coating the photoresist to the surface of the substrate, and coating a masking and locating photoresist to the surface at one side of the polycrystalline silicon in contact with the photoresist, wherein the masking and locating photoresist is connected with the photoresist at one side of the polycrystalline silicon; and using the overlay offset of the I line photoetching machine for correction to make the width of the masking and locating photoresist be 0.18[mu]m; and d, carrying out corrosion treatment at second time, namely, corroding to remove the photoetched polycrystalline silicon on the substrate to obtain the polycrystalline silicon pattern with the width of 0.18[mu]m below the masking and locating photoresist. The method has simple and convenient process steps, can obtain the pattern with the line width of 0.18[mu]m by using the I line photoresist and reduce the development cost, can be suitable for the need of scientific research development, and is safe and reliable.

Description

technical field [0001] The invention relates to a method for etching line width graphics in integrated circuits, especially a method for realizing 0.18 μm line width graphics with a double photolithography method for an I-line lithography machine, specifically using a limit resolution not exceeding The invention relates to a method for forming a pattern with a line width of 0.18 μm by etching with a 0.35 μm I-line photolithography machine, belonging to the technical field of integrated circuit manufacturing technology. Background technique [0002] With the development of integrated circuit silicon process technology, line width reduction has become an important technical index for the development of silicon process technology. The reduction of line width means that the power consumption is reduced, the chip area is greatly reduced, and the integration level is greatly improved. The equipment is a photolithography machine. In order to make the lithography machine achieve a...

AI Technical Summary

Problems solved by technology

Through the above calculation, it can be simply concluded that the limit resolution of ordinary I-line lithography machine with NA of 0.57 is about 0.5 μm, and it is impossible to achieve a pattern with a line width of 0.18 μm through conventional lithography methods, and a special process must be used. it is possible to complete

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