Silicon-based power device structure based on substrate bias technology

Abstract

The invention belongs to the technical field of semiconductor power devices. A silicon-based power device based on a substrate bias technology forms a reverse-biased PN junction by a compound substrate structure with reverse conduction type; by the electric field distribution in a substrate electric-field modulator, the longitudinal electric-field peak value is reduced, and the whole blocking voltage born by the conventional power device in the longitudinal direction is changed into a part of the blocking voltage, so that the voltage resistance of the device is enhanced, and the compromise relation of the power device between conducting resistance and breakdown voltage is improved. By utilization of the silicon-based substrate bias technology provided by the invention, the structure of the device can be designed by flexibly combining multiple surface terminal technologies. The silicon-based power device structure can be utilized for manufacturing various high-voltage-resistant devices with excellent performance, for example, the power devices such as lateral double-diffusion field effect transistors, PN diodes and lateral insulated gate bipolar type power transistors and the like.

Description

technical field [0001] A silicon-based power device structure based on substrate bias technology belongs to the technical field of semiconductor power devices, and in particular relates to the technical field of silicon-based power device withstand voltage. Background technique [0002] An ideal power device should have ideal static and dynamic characteristics, be able to withstand high voltage in the off state, and have large current and low voltage drop in the on state. The lateral device electrodes are all on the surface of the chip, which is easy to realize integration with low-voltage signal circuits through internal connections, and the driving circuit is simple. As a commonly used lateral power device, LDMOS (lateral double diffused MOS) has the advantages of thermal stability against secondary breakdown, less localized current concentration, fast switching speed and good frequency characteristics. [0003] The structure of a typical conventional n-type LDMOS is as ...

AI Technical Summary

Problems solved by technology

However, SOI-based power devices inevitably bring about the problems of difficult manufacturing process, high cost, small safe operating area and low reliability. The structure of silicon-based power devices based on substrate bias technology has not been reported yet.

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