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Production method of tri-axial accelerometer

A technology of shaft acceleration and manufacturing method, which is applied in the directions of multi-dimensional acceleration measurement, acceleration measurement using inertial force, and manufacture of microstructure devices, etc. The effect of the production process

Inactive Publication Date: 2012-04-18
AAC TECH PTE LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The three-axis accelerometer relevant to the present invention generally adopts polysilicon as the substrate or utilizes two silicon wafers to bond and integrate, but the residual stress of polysilicon is relatively high, and polysilicon is relatively thin, and does not utilize processing; Utilize two silicon wafers to generate each The necessary structural layers are then bonded and integrated together. The cost of this method is too high, which is not conducive to reducing production costs, and it is difficult to achieve users' requirements for high-performance and low-cost products.

Method used

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  • Production method of tri-axial accelerometer
  • Production method of tri-axial accelerometer
  • Production method of tri-axial accelerometer

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Embodiment Construction

[0026] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0027] The invention provides a method for processing an acceleration sensor based on an SOI wafer as a substrate. Figure 1 to Figure 12 Shown is the manufacture method of triaxial accelerometer 10 of the present invention, and its specific operation steps are as follows:

[0028] A. If figure 1 As shown, an SOI (Siliconon Insulator, silicon on an insulating substrate) wafer is provided, and the SOI wafer includes a silicon substrate layer 11, an intermediate oxide layer 12 and a doped silicon top layer 13;

[0029] B. If figure 2 As shown, a groove 130 is etched in the doped silicon top layer 13 by using Deep Reactive Ion Etching (DREI, Deep Reactive Ion Etching), so that the groove 130 runs through the entire doped silicon top layer 13;

[0030] C. If image 3 As shown, a first protective layer 141 is deposited on the doped silicon top layer 13 ...

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Abstract

The invention provides a production method of a tri-axial accelerometer, characterized by using an SOI chip as a substrate and finishing the arrangement of a structural layer of X-Y axis and Z axis of the tri-axial accelerometer on the chip. According to the invention, the production cost is reduced, and the production process is simplified.

Description

【Technical field】 [0001] The invention relates to a manufacturing method of an accelerometer, in particular to a manufacturing method of a three-axis accelerometer. 【Background technique】 [0002] An accelerometer, or acceleration sensor, is an electronic device that measures acceleration forces. Acceleration sensors are mainly used in position sensing, displacement sensing or motion state sensing. For example, using an acceleration sensor on a mobile phone can detect the placement status of the mobile phone, whether it is flat or tilted, etc., and start different programs according to the status to achieve a certain effect. For example, it can be applied to a laptop computer to detect The mobile status of the notebook, and based on these data, the system will intelligently choose to turn off the hard disk or keep it running, so as to protect the hard disk damage caused by vibration, such as a bumpy working environment, or accidentally dropping the computer, Protect the da...

Claims

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Application Information

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IPC IPC(8): B81C1/00G01P15/18
Inventor 张睿葛舟孟珍奎谢金杨斌张庆鑫刘友合徐景辉
Owner AAC TECH PTE LTD